Characterization of sensitivity and resolution of silicon resistive probe

Japanese Journal of Applied Physics

Volumn 47, Issue 3 PART 1, 2008, Pages 1717-1722

  Kim, Junsoo ^a   Lee, Jaehong ^a   Song, Ickhyun ^a   Lee, Jong Duk ^a   Park, Byung Gook ^a   Hong, Seungbum ^b   Ko, Hyoungsoo ^b   Min, Dong Ki ^b   Park, Hongsik ^b   Park, Chulmin ^b   Jung, Juhwan ^b   Shin, Hyungcheol ^a  

^a Seoul National University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Data storage system; Read write head of a probe; Resistive probe; Sensitivity; Simulation; Spatial resolution

Indexed keywords

ANNEALING; DATA STORAGE EQUIPMENT; ELECTROSTATICS; FERROELECTRIC MATERIALS; PROCESS ENGINEERING; SCANNING; SILICON; SURFACES;

DATA STORAGE SYSTEM; READ/WRITE HEAD OF A PROBE; RESISTIVE PROBE; SENSITIVITY; SIMULATION; SPATIAL RESOLUTION;

SENSITIVITY ANALYSIS;

EID: 54249136924     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.1717     Document Type: Article

References (15)

1. D. Litvinov and S. Khizroev: J. Magn. Magn. Mater. 264 (2003) 275.
2. M. Despont, J. Brugger, U. Drechsler, U. Dürig, W. Häberle, M. Lutwyche, H. Rothuizen, R. Stutz, R. Widmer, G. Binning, H. Rohrer, and P. Vettiger: Sens. Actuators A 80 (2000) 100.
3. P. Vettiger, G. Cross, M. Despont, U. Drechsler, U. Durig, B. Gotsmann, W. Haberle, M. A. Lantz, H. E. Rothuizen, R. Stutz, and G. K. Binning: IEEE Trans, Nanotechnol. 1 (2002) 39,
4. H. Park, J. Jung, D. Min, S. Kim, and S. Hong: Appi. Phys. Lett. 84 (2004) 1734.
5. ATHENA and ATLAS User's Manual (Silvaco Inc., 2000).
6. S. Hong, J. Woo, H. Shin, J. U. Jeon, Y. E. Park, and K. No: J. Appl. Phys. 89 (2001) 1377.
7. C. H. Ahn, T. Tybell, L. Antognazza, K. Char, R. H. Hammond, M. R. Beasley, O. Fischer, and J.-M. Triscone: Science 276 (1997) 1100.
8. K. Franke: Ferroelectr. Lett. 19 (1995) 35.
9. A. Gruverman, O. Auciello, and H. Tokumoto: Appl. Phys. Leu. 69 (1996) 3191.
10. E. L. Colla, S. Hong, D. V. Taylor, A. K. Tagantsev, N. Setter, and K. No: Appl. Phys. Lett. 72 (1998) 2763.
11. J. W. Hong, G. H. Noh, S.-I. Park, S. T. Kwun, and Z. G. Khim: Phys. Rev. B 58 (1998) 5078.
12. A. Asenov and S. Saini: IEEE Trans. Electron Devices 46 (1999) 1718.
13. R. M. Swanson and J. D. Meindl: IEEE J. Solid-State Circuits 7 (1972) 146.
14. M. J. Van der Tol and S. G. Chamberlain: IEEE Trans. Electron Devices 40 (1993) 741.
15. C. Bulucea and D. Kerr: Solid-State Electron, 41 (1997) 1345.