Stark tuning of the charge states of a two-donor molecule in silicon

Nanotechnology

Volumn 22, Issue 22, 2011, Pages

  Rahman, Rajib ^a,b   Park, Seung H ^b   Klimeck, Gerhard ^b,c   Hollenberg, Lloyd C L ^d  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b Purdue University   (United States)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^d UNIVERSITY OF MELBOURNE   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

AS INTERFACES; CHARGE LOCALIZATION; CHARGE STATE; DEGREES OF FREEDOM; DESIGN AND CONTROL; DEVICE FABRICATIONS; DONOR MOLECULES; GATE CONTROL; GATE PLACEMENT; GATE VOLTAGES; MOLECULAR STATE; MOLECULAR SYSTEMS; OPERATING PRINCIPLES; QUANTUM BITS; TIGHT BINDING; WAVEFUNCTION SYMMETRY;

DIAMOND FILMS; ELECTRONIC STRUCTURE; ENERGY GAP; IONIZATION; MOLECULES; ORGANIC POLYMERS; PHOSPHORUS; SOLIDS;

CRYSTAL ATOMIC STRUCTURE;

EID: 79954517847     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/22/225202     Document Type: Article

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