Transport-based dopant metrology in advanced FinFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Lansbergen, Gabriel P ^a   Rahman, Rajib ^b   Wellard, Cameron J ^c   Caro, Jaap ^a   Collaert, Nadine ^d   Biesemans, Serge ^d   Klimeck, Gerhard ^b,e   Hollenberg, Lloyd C L ^c   Rogge, Sven ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b Purdue University   (United States)

^c UNIVERSITY OF MELBOURNE   (Australia)

^d IMEC   (Belgium)

^e CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL SPECIES; EXPERIMENTAL DATUM; FINFETS; LOCAL ELECTRIC FIELDS; NEW APPROACHES; QUANTUM STATE;

ELECTRIC FIELDS; ELECTRON DEVICES; THREE DIMENSIONAL;

IMPURITIES;

EID: 64549124260     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796794     Document Type: Conference Paper

References (10)

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8. G.P. Lansbergen et al., "Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET", Nature Physics 4, 656 (2008)
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