Challenges in cross-sectional scanning tunneling microscopy on semiconductors

Semiconductor Science and Technology

Volumn 26, Issue 6, 2011, Pages

  Garleff, J K ^a   Wijnheijmer, A P ^a   Koenraad, P M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; BAND GAPS; BANDBENDING; CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPIES; ELECTRONIC SURFACE STATE; GAAS; IMPURITY ATOMS; QUANTITATIVE INTERPRETATION; SAMPLE PREPARATION; SPECTRAL POSITION; TUNNELING MECHANISM; TUNNELING PATHS; TUNNELING SPECTROSCOPY;

BINDING ENERGY; CRYSTAL ATOMIC STRUCTURE; ELECTRONIC PROPERTIES; ELECTRONIC STATES; GALLIUM ALLOYS; GALLIUM ARSENIDE; GERMANIUM; IMPURITIES; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SPECTROSCOPY; SURFACES;

SCANNING TUNNELING MICROSCOPY;

EID: 79953856435     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/6/064001     Document Type: Article

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