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Volumn 66, Issue 19, 2002, Pages 1953061-19530614

Interplay between tip-induced band bending and voltage-dependent surface corrugation on GaAs(110) surfaces

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GALLIUM;

EID: 0037113672     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (48)

References (29)
  • 10
    • 33646620096 scopus 로고    scopus 로고
    • note
    • -3.
  • 15
    • 33744607543 scopus 로고
    • J. Tersoff and D. R. Hamann, Phys. Rev. Lett. 50, 1998 (1983); Phys. Rev. B 31, 805 (1985).
    • (1985) Phys. Rev. B , vol.31 , pp. 805
  • 16
    • 0003529082 scopus 로고
    • Oxford University Press, Oxford
    • C. J. Chen, Introduction to Scanning Tunneling Microscopy, (Oxford University Press, Oxford, 1993). Chap. 3 explains that for an s-like tip state, the tunneling matrix element is proportional to the surface density of states of the sample evaluated at the centre of the tip apex atom. The tip-sample interaction effects relevant for this paper are explained on p. 177 and further, and on p. 189.
    • (1993) Introduction to Scanning Tunneling Microscopy , pp. 177
    • Chen, C.J.1
  • 17
    • 0002614854 scopus 로고    scopus 로고
    • edited by R. Wiesendanger and H. J. Günteroth, Springer Verlag Berlin
    • S. Ciraci in Scanning Tunneling Microscopy III, edited by R. Wiesendanger and H. J. Günteroth, Springer Verlag Berlin, p. 182, p. 197 (1996).
    • (1996) Scanning Tunneling Microscopy III , pp. 182
    • Ciraci, S.1
  • 22
    • 0003437938 scopus 로고
    • Harvard University Press, Cambridge, MA
    • R. Gomer, Field Emission and Ionization, (Harvard University Press, Cambridge, MA, 1961), p. 45.
    • (1961) Field Emission and Ionization , pp. 45
    • Gomer, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.