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Volumn 56, Issue 16, 1997, Pages 10538-10543

Nonequilibrium configurations of monatomic steps on cleaved GaAs(110) surfaces

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EID: 0642336182     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.10538     Document Type: Article
Times cited : (8)

References (21)
  • 1
    • 0003924689 scopus 로고
    • Fracture Mechanics, edited by H. Mughrabi (VCH, Weinheim, 1993).
    • (1993) Fracture Mechanics
  • 5
    • 0000416218 scopus 로고
    • Brad Lee Holian and Ramon Ravelo, Phys. Rev. B 51, 11 275 (1995).
    • (1995) Phys. Rev. B , vol.51 , pp. 11275
  • 20
    • 3743061510 scopus 로고
    • Distributions for steps that were brought into thermal equilibrium by controlled annealing were acquired by Wang on Si(111) and Swartzentruber et al. on Si(001) (Ref. 13). Due to surface strain fields, these display substantially narrower distributions than noninteracting steps. On GaAs, annealing experiments are not as easily performed, since the vapor pressure of As exceeds (Formula presented) mbar at 475 °C leading to nonstoichiometric evaporation of arsenic
    • Wang et al. detected a dependence of terrace width distributions on the cooling rate of the sample [X. S. Wang, J. L. Goldberg, N. C. Bartelt, T. L. Einstein, and Ellen D. Williams, Phys. Rev. Lett. 65, 2430 (1990)]. Distributions for steps that were brought into thermal equilibrium by controlled annealing were acquired by Wang on Si(111) and Swartzentruber et al. on Si(001) (Ref. 13). Due to surface strain fields, these display substantially narrower distributions than noninteracting steps. On GaAs, annealing experiments are not as easily performed, since the vapor pressure of As exceeds (Formula presented) mbar at 475 °C leading to nonstoichiometric evaporation of arsenic.
    • (1990) Phys. Rev. Lett. , vol.65 , pp. 2430
    • Goldberg, J.1    Bartelt, N.2    Einstein, T.3
  • 21
    • 25544432027 scopus 로고
    • To our knowledge, no measured or calculated values for the kink energy on GaAs surfaces have been published. We assume that the values for GaAs are of the same order as for Si which are approximately 100 meV [E. D. Williams, Surf. Sci. 299/300, 506 (1994)].
    • (1994) Surf. Sci. , vol.299-300 , pp. 506


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.