-
1
-
-
0003924689
-
-
Fracture Mechanics, edited by H. Mughrabi (VCH, Weinheim, 1993).
-
(1993)
Fracture Mechanics
-
-
-
3
-
-
5544269322
-
-
J. Fineberg, S. P. Gross, M. Marder, and H. L. Swinney, Phys. Rev. Lett. 67, 457 (1991).
-
(1991)
Phys. Rev. Lett.
, vol.67
, pp. 457
-
-
Fineberg, J.1
Gross, S.2
Marder, M.3
Swinney, H.4
-
4
-
-
0001560681
-
-
F. F. Abraham, D. Brodbeck, R. A. Rafey, and W. E. Rudge, Phys. Rev. Lett. 73, 272 (1994).
-
(1994)
Phys. Rev. Lett.
, vol.73
, pp. 272
-
-
Abraham, F.1
Brodbeck, D.2
Rafey, R.3
Rudge, W.4
-
5
-
-
0000416218
-
-
Brad Lee Holian and Ramon Ravelo, Phys. Rev. B 51, 11 275 (1995).
-
(1995)
Phys. Rev. B
, vol.51
, pp. 11275
-
-
-
10
-
-
4243320473
-
-
R. Möller, R. Coenen, B. Koslowski, and M. Rauscher, Surf. Sci. 217, 289 (1989).
-
(1989)
Surf. Sci.
, vol.217
, pp. 289
-
-
Möller, R.1
Coenen, R.2
Koslowski, B.3
Rauscher, M.4
-
11
-
-
0040806299
-
-
Y.-N. Yang, B. M. Trafas, R. L. Siefert, and J. H. Weaver, Phys. Rev. B 44, 3218 (1991).
-
(1991)
Phys. Rev. B
, vol.44
, pp. 3218
-
-
Trafas, B.1
Siefert, R.2
Weaver, J.3
-
12
-
-
0025567622
-
-
G. Cox, K. H. Graf, D. Szynka, U. Poppe, and K. Urban, Vacuum 41, 591 (1990).
-
(1990)
Vacuum
, vol.41
, pp. 591
-
-
Cox, G.1
Graf, K.2
Szynka, D.3
Poppe, U.4
Urban, K.5
-
13
-
-
35949005599
-
-
B. S. Swartzentruber, N. Kitamura, M. G. Lagally, and M. B. Webb, Phys. Rev. B 47, 13 432 (1993).
-
(1993)
Phys. Rev. B
, vol.47
, pp. 13432
-
-
Swartzentruber, B.1
Kitamura, N.2
Lagally, M.3
Webb, M.4
-
18
-
-
0001348791
-
-
M. Heinrich, Ph. Ebert, C. Domke, and K. Urban, Phys. Rev. B 53, 10 894 (1996).
-
(1996)
Phys. Rev. B
, vol.53
, pp. 10894
-
-
Heinrich, M.1
Domke, C.2
Urban, K.3
-
20
-
-
3743061510
-
-
Distributions for steps that were brought into thermal equilibrium by controlled annealing were acquired by Wang on Si(111) and Swartzentruber et al. on Si(001) (Ref. 13). Due to surface strain fields, these display substantially narrower distributions than noninteracting steps. On GaAs, annealing experiments are not as easily performed, since the vapor pressure of As exceeds (Formula presented) mbar at 475 °C leading to nonstoichiometric evaporation of arsenic
-
Wang et al. detected a dependence of terrace width distributions on the cooling rate of the sample [X. S. Wang, J. L. Goldberg, N. C. Bartelt, T. L. Einstein, and Ellen D. Williams, Phys. Rev. Lett. 65, 2430 (1990)]. Distributions for steps that were brought into thermal equilibrium by controlled annealing were acquired by Wang on Si(111) and Swartzentruber et al. on Si(001) (Ref. 13). Due to surface strain fields, these display substantially narrower distributions than noninteracting steps. On GaAs, annealing experiments are not as easily performed, since the vapor pressure of As exceeds (Formula presented) mbar at 475 °C leading to nonstoichiometric evaporation of arsenic.
-
(1990)
Phys. Rev. Lett.
, vol.65
, pp. 2430
-
-
Goldberg, J.1
Bartelt, N.2
Einstein, T.3
-
21
-
-
25544432027
-
-
To our knowledge, no measured or calculated values for the kink energy on GaAs surfaces have been published. We assume that the values for GaAs are of the same order as for Si which are approximately 100 meV [E. D. Williams, Surf. Sci. 299/300, 506 (1994)].
-
(1994)
Surf. Sci.
, vol.299-300
, pp. 506
-
-
|