ZnO thin film transistors for RF applications

Materials Research Society Symposium Proceedings

Volumn 1201, Issue , 2010, Pages 227-238

  Bayraktaroglu, Burhan ^a   Leedy, Kevin ^a   Neidhard, Robert ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT GAINS; GATE LENGTH; GATE METALS; NANOCRYSTALLINE ZNO; ON/OFF RATIO; POWER GAINS; PULSED-LASER DEPOSITION TECHNIQUE; RF APPLICATIONS; SUBTHRESHOLD; TEMPERATURE RANGE; VOLTAGE SWINGS; ZNO THIN FILM;

DRAIN CURRENT; METALLIC FILMS; OPTICAL FILMS; PULSED LASER DEPOSITION; PULSED LASERS; SURFACE ROUGHNESS; THIN FILM TRANSISTORS; THIN FILMS; VAPOR DEPOSITION; ZINC; ZINC OXIDE;

DEPOSITION;

EID: 77953985658     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)

1. C. R. Kagan and P. Andry, "Thin Film Transistors", Marcel Dekker Publishing, New York, 2003.
2. P.F. Carcia, R. S. McLean, and M. H. Reilly, Appl. Phys. Lett, 88, 123509 (2006).
3. P. K. Shin, Y. Aya, T. Ikegami, and K. Ebihara, Thin Solid Films 516, 3767 (2008).
4. W. Lim, S. H. Kim, Y. L. Wang, J. W. Lee, D. P. Norton, S. J. Pearton, F. Ren, and I.I. Kravchenko, J. Electrochem. Soc. 155, H383 (2008).
5. H. Q. Chiang, D. Hong, C. M. Hung, R. E. Presley and J. F. Wager, J. Vac. Sci. Technol. B 24, 2702 (2006).
6. H. Q. Chiang, J. F. Wager, R. L. Hoffman, J. Jeong, and D. A. Keszler, Appl. Phys. Lett. 86, 013503 (2005).
7. B. Bayraktaroglu, K. Leedy and R. Neidhard, IEEE Electron Dev. Lett. 29, 1024 (2008).
8. Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doǧan, V. Avrutin, S.J. Cho, and H. Morkof, Appl. Phys. Rev. 98, 041301 (2005).
9. B. Bayraktaroglu, K. Leedy and R. Neidhard, IEEE Electron Dev. Lett. 30, 946 (2009).
10. L. Bentes, R. Ayouchi, C. Santos, R. Schwarz, P. Sanguino, O. Conde, M. Peres, T. Monteiro, and O. Teodoro, Superlattices and Microstructures 42, 152 (2007).
11. U.S. Amirhaghi, V. Craciun, D. Craciun, J. Elders and I. W. Boyd, Microelectronics Engineering 25, 321 (1994).
12. L. Han, F. Mei, C. Liu, C. Pedro and E. Alves, Physica E, 40, 699 (2008).
13. C.-F. Yu, C.-W. Sung, S.-H. Chen and S.-J. Sun, Appl. Surface Sci. 256, 792 (2009).
14. Y. L. Wang, L. N. Covert, T. J. Anderson, W. Lim, J. Lin, S. J. Pearton, D. P. Norton, J. M. Zavada and F. Ren, Electrochem. Sol. State Lett. 11, H60 (2008).