Relationship between the photoluminescence and conductivity of undoped ZnO thin films grown with various oxygen pressures

Applied Surface Science

Volumn 256, Issue 3, 2009, Pages 792-796

  Yu, Chang Feng ^a   Sung, Che Wei ^a   Chen, Sy Hann ^a   Sun, Shih Jye ^b  

^a NATIONAL CHIAYI UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

Author keywords

Conductivity; Deep level emission; Pulsed laser deposition; Undoped ZnO

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY; ENERGY GAP; II-VI SEMICONDUCTORS; METALLIC FILMS; OPTICAL FILMS; OXYGEN; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; PULSED LASERS; SUBSTRATES; X RAY DIFFRACTION; ZINC OXIDE; ZINC SULFIDE;

BAND GAP ENERGY; C-AXIS ORIENTATIONS; DEEP LEVEL EMISSION; GLASS SUBSTRATES; HEXAGONAL WURTZITE; OXYGEN PRESSURE; TRANSMITTANCE SPECTRA; ZNO THIN FILM;

THIN FILMS;

EID: 71749110899     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.08.061     Document Type: Article

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