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Japanese Journal of Applied Physics

Volumn 49, Issue 3 PART 1, 2010, Pages

Gettering efficiency of Si(110)/Si(100) directly bonded hybrid crystal orientation substrates

(5) Aoki, Tatsuhiko a,b Kariyazaki, Hiroaki a Sueoka, Koji a Toyoda, Eiji b Izunome, Koji b

a OKAYAMA PREFECTURAL UNIVERSITY (Japan)

b Nissei Bldg (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

3D TRANSITION METALS; ACTIVE LAYER; BONDED INTERFACE; CANDIDATE MATERIALS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CU PRECIPITATES; DIFFUSIVITIES; GETTERING; GETTERING EFFICIENCY; HYBRID CRYSTALS; PREFERENTIAL ETCHING; SECONDARY IONIZATION; SI(1 0 0); SI(110); TEM;

CHROMIUM; CRYSTAL ORIENTATION; METALLIC COMPOUNDS; MOS DEVICES; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICIDES; SILICON; TRANSITION METALS; TRANSMISSION ELECTRON MICROSCOPY;

SUBSTRATES;

EID: 77953988098 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.035501 Document Type: Article

Times cited : (3)

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