Analysis of heterogeneous iron precipitation in multicrystalline silicon

Solid State Phenomena

Volumn 156-158, Issue , 2009, Pages 27-33

  Haarahiltunen, A ^a   Vahanissi V ^a   Yli Koski, M ^a   Talvitie, H ^a   Savin, H ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

Iron precipitation; Multicrystalline silicon; Phosphorus diffusion gettering

Indexed keywords

DEFECTS; DIFFUSION; EXPERIMENTS; GRAIN BOUNDARIES; PHOSPHORUS; PRECIPITATES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; POLYSILICON; SILICON SOLAR CELLS;

AS-GROWN; BENEFICIAL EFFECTS; GETTERING; INTERSTITIAL IRON; INTRINSIC GETTERING; IRON CONCENTRATIONS; IRON PRECIPITATION; MULTI-CRYSTALLINE SILICON; MULTI-CRYSTALLINE SILICON SOLAR CELLS; OPTIMAL PARAMETER; PHOSPHORUS DIFFUSION;

POLYSILICON; IRON;

EID: 75849120085     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.156-158.27     Document Type: Conference Paper

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