Interaction of metal impurities with extended defects in crystalline silicon and its implications for gettering techniques used in photovoltaics

Materials Science and Engineering: B

Volumn 159-160, Issue C, 2009, Pages 264-268

  Seibt, M ^a   Abdelbarey, D ^a   Kveder, V ^a   Rudolf, C ^a   Saring, P ^a   Stolze, L ^a   Voss O ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

Gettering; Metal impurities; Photovoltaics; Silicon

Indexed keywords

CARRIER LIFETIME; IMPURITIES; NICKEL COMPOUNDS; PHOSPHORUS; PRECIPITATES; SILICIDES; SILICON OXIDES; SILICON SOLAR CELLS; TRANSITION METALS;

CRYSTALLINE SILICONS; EXTENDED DEFECT; GETTERING; GRAIN BOUNDARY DISLOCATION; METAL IMPURITIES; MICRO-DEFECTS; MULTICRYSTALLINE; PHOTOVOLTAIC APPLICATIONS; PHOTOVOLTAICS; SILICON MATERIALS;

GRAIN BOUNDARIES;

EID: 67349143034     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.12.044     Document Type: Article

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