Kink effect in AlGaN/GaN HEMTs induced by Drain and gate pumping

IEEE Electron Device Letters

Volumn 32, Issue 4, 2011, Pages 482-484

  Wang, Maojun ^a   Chen, Kevin J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

AlGaN GaN; high electron mobility transistor (HEMT); kink effect

Indexed keywords

ALGAN/GAN; ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; CURRENT LEVELS; D ELECTRONS; DE-TRAPPING; DOMINANT MECHANISM; DRAIN BIAS; DRAIN VOLTAGE; ELECTRON TRAPPING; EPITAXIAL BUFFER LAYERS; GAN LAYERS; GATE TERMINALS; HIGH-ELECTRON MOBILITY TRANSISTOR (HEMT); KINK EFFECT; TEMPERATURE DEPENDENT; TRANSIENT MEASUREMENT;

ACTIVATION ENERGY; BIAS VOLTAGE; CURRENT VOLTAGE CHARACTERISTICS; DRAIN CURRENT; ELECTRON GAS; ELECTRON MOBILITY; ELECTRONS; GALLIUM NITRIDE; HOT ELECTRONS; PUMPS; TRANSIENT ANALYSIS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79953049403     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2105460     Document Type: Article

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