New aspects and mechanism of kink effect in static back-gate transconductance characteristics in fully-depleted SOI MOSFET's on high-dose SIMOX wafers

IEEE Transactions on Electron Devices

Volumn 47, Issue 2, 2000, Pages 360-366

  Ushiki, Takeo ^a,b   Kotani, Koji ^a,b   Funaki, Toshihiko ^a,b,c   Kawai, Kunihiro ^a,b   Ohmi, Tadahiro ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRAPS; ELECTRONIC DENSITY OF STATES; GATES (TRANSISTOR); HOLE TRAPS; INTERFACES (MATERIALS); SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; THIN FILM DEVICES; TRANSCONDUCTANCE;

KINK EFFECTS; SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX);

MOSFET DEVICES;

EID: 0033895024     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.822281     Document Type: Article

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