The kink effect at cryogenic temperatures in deep submicron AlGaN/GaN HEMTs

IEEE Electron Device Letters

Volumn 30, Issue 3, 2009, Pages 209-212

  Cuerdo, R ^a   Pei, Y ^b   Chen, Z ^b   Keller, S ^b   DenBaars, S P ^b   Calle, F ^a   Mishra, U K ^b  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b University of California   (United States)

Author keywords

Cryogenic temperatures; Fluorine treatment; Gallium nitride; High electron mobility transistors (HEMTs); Kink effect

Indexed keywords

CRYOGENICS; ELECTRON MOBILITY; ETCHING; FLUORINE; GALLIUM ALLOYS; GALLIUM NITRIDE; JITTER; PLASMAS; SEMICONDUCTING GALLIUM;

ALGAN/GAN; ALGAN/GAN HEMTS; CRYOGENIC TEMPERATURES; DEEP SUBMICRON; ETCHING TREATMENTS; FLUORINE PLASMAS; GATE DEVICES; HIGH-ELECTRON MOBILITY TRANSISTORS (HEMTS); KINK EFFECT; SHORT PULSE; UV LIGHTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 62549148156     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2011289     Document Type: Article

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