메뉴 건너뛰기




Volumn 96, Issue 4, 2004, Pages 1899-1903

Influence of the deposition time of barrier layers on optical and structural properties of high-efficiency green-light-emitting InGaN/GaN multiple quantum wells

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DOPING (ADDITIVES); EVAPORATION; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; PROBLEM SOLVING; RELAXATION PROCESSES; SAPPHIRE; SEMICONDUCTOR QUANTUM DOTS; STIMULATED EMISSION; X RAY DIFFRACTION ANALYSIS;

EID: 4344618168     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1769099     Document Type: Article
Times cited : (50)

References (30)
  • 23
    • 0346724066 scopus 로고    scopus 로고
    • S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, Appl. Phys. Lett. 69, 4188 (1996); 70, 2822 (1997).
    • (1997) Appl. Phys. Lett. , vol.70 , pp. 2822


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.