Determination of InN-GaN heterostructure band offsets from internal photoemission measurements

Applied Physics Letters

Volumn 91, Issue 15, 2007, Pages

  Mahmood, Zahid Hasan ^a   Shah, A P ^b   Kadir, Abdul ^b   Gokhale, M R ^b   Ghosh, Sandip ^b   Bhattacharya, Arnab ^b   Arora, B M ^b  

^a UNIVERSITY OF DHAKA   (Bangladesh)

^b TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

EPILAYERS; HETEROJUNCTIONS; PHOTOCURRENTS; PHOTOELECTRON SPECTROSCOPY; THRESHOLD ELEMENTS;

BAND OFFSETS; HETEROINTERFACE; THRESHOLD ENERGY;

PHOTOEMISSION;

EID: 35248821083     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2794788     Document Type: Article

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