Controllable p-n junction formation in monolayer graphene using electrostatic substrate engineering

Nano Letters

Volumn 10, Issue 11, 2010, Pages 4634-4639

  Chiu, Hsin Ying ^a   Perebeinos, Vasili ^a   Lin, Yu Ming ^a   Avouris, Phaedon ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Graphene; high field transport; p n junction; substrate; transistor; trap charges

Indexed keywords

ADSORBANTS; ELECTRIC TRANSPORT; ELECTRONIC MODIFICATIONS; ELECTROSTATIC GATES; ELECTROSTATIC POTENTIALS; HIGH FIELD; HIGH FIELD TRANSPORT; P-N JUNCTION; P-N JUNCTION FORMATION; SUBSTRATE ENGINEERING; TRAP CHARGE;

CHARGE TRANSFER; ELECTRIC COILS; ELECTROSTATICS; ION EXCHANGE; MONOLAYERS; SEMICONDUCTOR JUNCTIONS; SILICON COMPOUNDS; SUBSTRATES;

GRAPHENE;

GRAPHITE; NANOMATERIAL;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; EQUIPMENT; EQUIPMENT DESIGN; MATERIALS TESTING; SEMICONDUCTOR; STATIC ELECTRICITY; ULTRASTRUCTURE;

COMPUTER SIMULATION; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GRAPHITE; MATERIALS TESTING; MODELS, CHEMICAL; NANOSTRUCTURES; SEMICONDUCTORS; STATIC ELECTRICITY;

EID: 78449278914     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl102756r     Document Type: Article

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