The effect of SiO 2 buffer layer on the electrical and structural properties of Al-doped ZnO films deposited on soda lime glasses

Applied Surface Science

Volumn 257, Issue 13, 2011, Pages 5471-5475

  Ri, K H ^a   Wang, Y B ^a   Zhou, W L ^a   Gao, J X ^a   Wang, X J ^a   Yu, J ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Al doped zinc oxide; Buffer layer; Soda lime glass; Sputtering; Transparent conducting film

Indexed keywords

ALUMINUM OXIDE; BUFFER LAYERS; CARRIER CONCENTRATION; ENERGY GAP; GLASS; HALL MOBILITY; II-VI SEMICONDUCTORS; LIGHT ABSORPTION; LIME; OPTICAL FILMS; SEMICONDUCTOR DOPING; SILICA; SPUTTERING; STRUCTURAL PROPERTIES; SUBSTRATES; ZINC OXIDE;

AL-DOPED ZINC OXIDE; ELECTRICAL AND STRUCTURAL PROPERTIES; HIGH TEMPERATURE; OPTICAL ABSORPTION EDGE; QUARTZ GLASS SUBSTRATES; SODA LIME GLASS; SODA LIME GLASS SUBSTRATE; TRANSPARENT CONDUCTING FILMS;

FILM PREPARATION;

EID: 79952532983     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.10.099     Document Type: Article

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