Influence of oxygen partial pressure on transparency and conductivity of RF sputtered Al-doped ZnO thin films

Applied Surface Science

Volumn 157, Issue 1, 2000, Pages 47-51

  Tsuji, Takashi ^a   Hirohashi, Mitsuji ^b  

^a Chiba Polytechnic College   (Japan)

^b CHIBA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CARRIER CONCENTRATION; CARRIER MOBILITY; DOPING (ADDITIVES); DURABILITY; ELECTRIC CONDUCTIVITY OF SOLIDS; GLASS; GRAIN SIZE AND SHAPE; OPTICAL PROPERTIES; PRESSURE EFFECTS; TRANSPARENCY; ZINC OXIDE;

HALL MOBILITY; OXYGEN PARTIAL PRESSURE; RADIO FREQUENCY (RF) DIODE SPUTTERING;

CONDUCTIVE FILMS;

EID: 0033900437     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00517-6     Document Type: Article

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