Biaxial stress-dependent optical band gap, crystalline, and electronic structure in wurtzite ZnO: Experimental and ab initio study

Journal of Applied Physics

Volumn 104, Issue 8, 2008, Pages

  Li, Y F ^a,b   Yao, B ^a   Lu, Y M ^a   Gai, Y Q ^a,b   Cong, C X ^a   Zhang, Z Z ^a   Zhao, D X ^a   Zhang, J Y ^a   Li, B H ^a   Shen, D Z ^a   Fan, X W ^a   Tang, Z K ^c  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

BEAMS AND GIRDERS; ELECTRONIC STRUCTURE; ENERGY GAP; EXPERIMENTS; GALLIUM NITRIDE; METALLIC FILMS; OPTICAL FILMS; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; TENSILE STRESS; THICK FILMS; THIN FILMS; VALENCE BANDS; ZINC ALLOYS; ZINC OXIDE; ZINC SULFIDE;

AB INITIO CALCULATIONS; AB INITIO STUDIES; BAND GAPS; BAND MAXIMUMS; BAND MINIMUMS; BAND OFFSETS; BIAXIAL STRESSES; BIAXIAL TENSILE STRESSES; HEXAGONAL STRUCTURES; IN BANDS; LOW ENERGIES; OPTICAL ABSORBANCE SPECTRUMS; OPTICAL BANDS; SEMICONDUCTOR THIN FILMS; WURTZITE; X-RAY DIFFRACTIONS; ZNO THIN FILMS;

GALLIUM ALLOYS;

EID: 55249083762     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3000601     Document Type: Article

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