Contact materials for nanowire devices and nanoelectromechanical switches

MRS Bulletin

Volumn 36, Issue 2, 2011, Pages 106-111

  Hussain, Muhammad Mustafa ^a   Song, Jinhui ^b  

^a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT MATERIAL; IMPACT DEVICE; NANO-STRUCTURED; NANOELECTROMECHANICAL SWITCHES; NANOELECTRONIC DEVICES; NANOWIRE DEVICES; SIZE SCALING; ZERO-POWER;

ELECTRIC CONTACTS; IMPACT RESISTANCE; NANOELECTRONICS;

NANOWIRES;

EID: 79952523698     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/mrs.2011.6     Document Type: Article

References (48)

1. M. Law, J. Goldberger, P. Yang, Annu. Rev. Mater. Res. 34, 83 (2004).
2. R. E. Allen, Phys. Rev. B 25, 1423 (1982).
3. V. Schmidt, J. V. Wittemann, S. Senz, U. Gösele, Adv. Mater. 21, 2681 (2009).
4. U. Landman, R. N. Barnett, A. G. Scherbakov, P. Avouris, Phys. Rev. Lett. 85 (9), 1958 (2000).
5. F. Leonard, A. Talin, Phys. Rev. Lett. 97, 026804 (2006).
6. T. Hanrath, B. A. Korgel, Proc. Inst. Mech. Eng. N, J. Nanoeng. Nanosyst. 218 (2005).
7. J. Piscator, O. Engström, Physica E 40 (7), 2508 (2008).
8. K. Seo, S. Sharma, A. A. Yasseri, D. R. Stewart, T. I. Kamins, Electrochem. Solid-State Lett. 9, G69 (2006).
9. S. M. Woodruff, N. S. Dellas, B. Z. Liu, S. M. Eichfeld, T. S. Mayer, J. M. Redwing, S. E. Mohney, J. Vac. Sci. Technol., B 26, 1592 (2008).
10. S. J. Tans, A. Verschueren, C. Dekker, Nature 393, 49 (1998).
11. M. P. Anantram, F. Leonard, Rep. Prog. Phys. 69, 507 (2006).
12. P. L. McEuen, M. Fuhrer, H. Park, IEEE Trans. Nanotechnol. 1, 78 (2002).
13. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, Ph. Avouris, Phys. Rev. Lett. 89, 106801 (2002).
14. A. Javey, J. Guo, Q. Wang, M. Lundstrom, H. Dai, Nature 424, 654 (2003).
15. V. Derycke, R. Martel, J. Appenzeller, Ph. Avouris, Appl. Phys. Lett. 80, 2773 (2002).
16. M.-H. Ham, J.-H. Choi, W. Hwang, C. Park, W.-Y. Lee, J.-M. Myoung, Nanotechnology 17, 2203 (2006).
17. J. Zhou, Y. Gu, Y. Hu, W. Mai, P.-H. Yeh, G. Bao, A. K. Sood, D. L. Polla, Z. L. Wang, Appl. Phys. Lett. 94, 191103 (2009).
18. T.-Y. Wei, P.-H. Yeh, S.-Y. Lu, Z. L. Wang, J. Am. Chem. Soc. 131, 17690 (2009).
19. K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, Technical Digest of International Electron Devices Meeting, 289 (2002).
20. W. Y. Choi, B.-G. Park, J. D. Lee, T.-J. K. Liu, IEEE Electron Device Lett. 28, 743 (2007).
21. H. Kam, T.-J. K. Liu, E. Alon, M. Horowitz, Technical Digest of International Electron Devices Meeting, 1 (2008).
22. http://www.itrs.net/Links/2009ITRS/2009Chapters-2009Tables/2009-ERD.pdf
23. K. Akarvardar, C. Eggimann, D. Tsamados, Y. S. Chauhan, G. C. Wan, A. M. Ionescu, R. T. Howe, H.-S. P. Wong, IEEE Trans. Electron Devices 55, 1 (2008).
24. H. C. Nathanson, W. E. Newell, R. A. Wickstrom, IEEE Trans. Electron Devices 14 (3), 117 (1967).
25. G. Blackburn, M. Levi, J. Janata, Appl. Phys. Lett. 43 (7), 700 (1983).
26. T. Sato, M. Shimizu, H. Uchida, T. Katsube, Sens. Actuators, B 20 (2/3), 213 (1994).
27. Z. Gergintschew, P. Kornetzky, D. Schipanski, Sens. Actuators, B 35/36 (1-3), 285 (1996).
28. J. Voorthuyzen, P. Bergveld, Sens. Actuators, A 14 (4), 349 (1988).
29. J. Huang, R. Howe, H. Lee, Electron. Lett. 25 (23), 1571 (1989).
30. A. M. Ionescu, V. Pott, R. Fritschi, K. Banerjee, M. J. Declercq, Ph. Renaud, C. Hibert, Ph. Fluckiger, G.-A. Racine, Proc. ISQED 2002, 496 (2002).
31. H. Kam, D. T. Lee, R. T. Howe, T.-J. King, IEDM Tech. Dig. 463 (2005).
32. K. Akarvardar, D. Elata, R. Parsa, G. C. Wan, K. Yoo, J. Provine, P. Peumans, R. T. Howe, H.-S. P. Wong, Technical Digest of International Electron Devices Meeting (IEDM) 299 (2007).
33. J. P. Singh, D.-L. Liu, D.-X. Ye, R. C. Picu, T.-M. Lu, G.-C. Wang, Appl. Phys. Lett. 84, 3657 (2004).
34. I. Bargatin, I. Kozinsky, M. L. Roukes, Appl. Phys. Lett. 90, 093116 (2007).
35. W. W. Jang, J. O. Lee, J.-B. Yoon, M.-S. Kim, J.-M. Lee, S.-M. Kim, K.-H. Cho, D.-W. Kim, D. Park, W.-S. Lee, Appl. Phys. Lett. 92, 103110 (2008).
36. K. Akarvardar, H. Wong, "Nanoelectromechanical Logic and Memory Devices", presented at the ECS 2009 Summer Meeting.
37. M. Y. A. Yousif, P. Lundgren, F. Ghavanini, P. Enoksson, S. Bengtsson, Nanotechnology 19, 285204 (2008).
38. S. Tans, A. R. Verchueren, C. Dekker, Nature 393, 49 (1998).
39. S. J. Tans, M. H. Devoret, H. Dai, A. Thess, R. E. Smalley, L. J. Geerligs, C. Dekker, Nature 386, 474 (1997).
40. Y.-M. Lin, J. Appenzeller, Ph. Avouris, Technical Digest of International Electron Devices Meeting (IEDM) 687 (2004).
41. A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, J. Guo, P. McIntyre, P. McEuen, M. Lundstrom, H. J. Dai, Nat. Mater. 1, 241 (2002).
42. A. Javey, J. Guo, M. Paulsson, Q. Wang, D. Mann, M. Lundstrom, H. Dai, Phys. Rev. Lett. 92, 106804 (2004).
43. D. V. Singh, K. A. Jenkins, J. Appenzeller, Electron. Lett. 41, 280 (2005).
44. S. Ilani, L. A. K. Donev, M. Kindermann, P. L. McEuen, Nat. Phys. 2, 687 (2006).
45. G. Rebeiz, J. B. Muldavin, IEEE Microwave Mag. 2, 59 (2001).
46. J. S. Bunch, A. M. Zande, S. S. Verbridge, I. W. Frank, D. M. Tanenbaum, J. M. Parpia, H. G. Craighead, P. L. McEuen, Science 315 (5811) 490 (2007).
47. M. M. Hussain, C. E. Smith, D. Elata, K. Akarvardar, R. Parsa, K. Yoo, J. Provine, J. Williams, K. Rader, J. Barnett, C. Park, M. Cruz, P. D. Kirsch, H.-S. P. Wong, R. T. Howe, R. Jammy, NATO Advanced Research Workshop on Advanced Materials and Technologies for Micro/Nano Devices, Sensors and Actuators, St. Petersburg, Russia (2009).
48. R. Parsa, S. Chong, N. Patil, K. Akarvardar, J. Provine, D. Lee, D. Elata, S. Mitra, H.-S. P. Wong, R. T. Howe, Solid-State Sensors, Actuators, and Microsystems Workshop 7 (2010).