CMOS considerations in nanoelectromechanical carbon nanotube-based switches

Nanotechnology

Volumn 19, Issue 28, 2008, Pages

  Yousif, M Y A ^a   Lundgren, P ^a   Ghavanini, F ^a   Enoksson, P ^a   Bengtsson, S ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; DYNAMIC ANALYSIS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FUZZY LOGIC; MECHANICS; METAL ANALYSIS; MULTITASKING; NANOCOMPOSITES; NANOPORES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; STATIC ANALYSIS; VOLTAGE REGULATORS;

COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS); CRITICAL ISSUES; INTEGRATION DENSITIES; LOW POWERS; MEMORY APPLICATIONS; MEMORY ELEMENTS; NANO ELECTROMECHANICAL SWITCHES; NANO TUBE; PERFORMANCE METRICS; PERFORMANCE PARAMETERS; STANDBY POWER; STATIC AND DYNAMIC; THRESHOLD VOLTAGE CONTROL;

CARBON NANOTUBES;

CARBON; NANOTUBE;

ARTICLE; ELECTRIC POTENTIAL; ENERGY CONSUMPTION; PRIORITY JOURNAL; SEMICONDUCTOR; VELOCITY;

EID: 45149086901     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/28/285204     Document Type: Article

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