Ge epitaxial growth on GaAs substrates for application to Ge-source/drain GaAs MOSFETs

Journal of the Electrochemical Society

Volumn 157, Issue 1, 2010, Pages

  Luo, Guang Li ^a   Han, Zong You ^b   Chien, Chao Hsin ^a,b   Ko, Chih Hsin ^c   Wann, Clement H ^c   Lin, Hau Yu ^c   Shen, Yi Ling ^a   Chung, Cheng Ting ^b   Huang, Shih Chiang ^a   Cheng, Chao Ching ^b   Chang, Chun Yen ^b  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIALLY GROWN; GAAS; GAAS SUBSTRATES; GAAS(1 0 0); GE EPITAXIAL GROWTH; GE FILMS; GROWTH BEHAVIOR; INCUBATION TIME; INITIAL STAGES; ISLAND GROWTH; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOS-FET; MOSFETS; SELECTIVE EPITAXIAL GROWTH; SELECTIVE GROWTH; SOURCE-DRAIN; VAPOR DEPOSITION SYSTEMS; VIRTUAL SUBSTRATES; WET CHEMICALS;

EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; GERMANIUM; MOSFET DEVICES; SEMICONDUCTING GALLIUM; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ALLOYS;

EID: 72249083127     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3246000     Document Type: Article

References (11)

1. S. E. Thompson, M. Armstrong, C. Auth, S. Cea, R. Chau, G. Glass, T. Hoffman, J. Klaus, M. Zhiyong, B. Mcintyre, IEEE Electron Device Lett. 0741-3106, 25, 191 (2004). 10.1109/LED.2004.825195
2. K. Rim, S. Koester, M. Hargrove, J. Chu, P. M. Mooney, J. Ott, T. Kanarsky, P. Ronsheim, M. Leong, A. Grill, and H.-S. P. Wong, Dig. Tech. Pap.-Symp. VLSI Technol. 0743-1562, 2001, 59.
3. Y. Sun, E. W. Kiewra, J. P. De Souza, J. J. Bucchignano, K. E. Fogel, D. K. Sadana, and G. G. Shahidi, IEEE Electron Device Lett. 0741-3106, 30, 5 (2009), and references therein. 10.1109/LED.2008.2008827
4. G. L. Luo, Y. C. Hsieh, E. Y. Chang, M. H. Pilkuhn, C. H. Chien, T. H. Yang, C. C. Cheng, and C. Y. Chang, J. Appl. Phys. 0021-8979, 101, 084501 (2007). 10.1063/1.2722245 (Pubitemid 46691169)
5. X. S. Wang, K. W. Self, and W. H. Weinberg, J. Vac. Sci. Technol. A 0734-2101, 12, 1920 (1994). 10.1116/1.578983 (Pubitemid 24804923)
6. J. Falta, M. C. Reuter, and R. M. Tromp, Appl. Phys. Lett. 0003-6951, 65, 1680 (1994). 10.1063/1.112884
7. C. B. Ebert, L. A. Eyres, M. M. Fejer, and J. S. Harris, J. Cryst. Growth 0022-0248, 201-202, 187 (1999). 10.1016/S0022-0248(98)01317-7
8. M. Zhu, H. C. Chin, G. S. Samudra, and Y. C. Yeo, J. Electrochem. Soc. 0013-4651, 155, H76 (2008). 10.1149/1.2811859
9. Y. Bai, K. E. Lee, C. W. Cheng, M. L. Lee, and E. A. Fitzgerald, J. Appl. Phys. 0021-8979, 104, 084518 (2008). 10.1063/1.3005886
10. K. Brunner, Rep. Prog. Phys. 0034-4885, 65, 27 (2002). 10.1088/0034-4885/65/1/202
11. M. V. Fischetti, L. Wangt, B. Yu, C. Sachs, P. M. Asbeck, Y. Taur, and M. Rodwell, Tech. Dig.-Int. Electron Devices Meet. 0163-1918, 2007, 109.