Chalcogenide materials and their application to Non-Volatile Memories

Microelectronic Engineering

Volumn 88, Issue 5, 2011, Pages 807-813

  Sousa, Véronique ^a  

^a CEA GRENOBLE   (France)

Author keywords

Chalcogenide materials; Ionic conduction; Non Volatile Memories; Phase change

Indexed keywords

CHALCOGENIDE MATERIALS; CHALCOGENS; CRYSTALLINE PHASIS; CRYSTALLISATION; METALLIC IONS; NON-VOLATILE MEMORIES; PERIODIC TABLE; PHASE CHANGE; RANDOM ACCESS MEMORIES; SELENIDES;

CHEMICAL ELEMENTS; CHEMICALS; IONIC CONDUCTION; OXYGEN; PHASE CHANGE MEMORY; RANDOM ACCESS STORAGE; SELENIUM COMPOUNDS;

AMORPHOUS MATERIALS;

EID: 79952488783     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.06.042     Document Type: Conference Paper

References (49)

1. P.B. Littlewood J. Phys. C: Solid State Phys. 13 1980 4855 4873
2. D. Lencer Nat. Mater. 7 2008 972 977
3. K. Shportko Nat. Mater. 7 2008 653 658
4. A. Kolobov Nat. Mater. 3 2004 703 708
5. M. Wuttig, and N. Yamada Nat. Mater. 6 2007 824 832
6. A. Pirovano IEEE Trans. Electron Dev. 51 5 2004 714 719
7. D. Ielmini, and Y. Zhang J. Appl. Phys. 102 2007 054517
8. S.R. Ovshinsky Phys. Rev. B 21 1968 1450 1453
9. N. Yamada Japanese J. Appl. Phys. 26 1987 61 66
10. Downloaded from the site http://www.ovonic.com, 1999.
11. J.H. Oh et al., Full Integration of Highly Manufacturable 512Mb PRAM based on 90 nm Technology, Presented at IEDM, 2006.
12. G. Servalli, A 45 nm Generation Phase Change Memory Technology, Presented at IEDM, 2009.
13. M. Armand, Presented at IMST, 2007.
14. B. Hyot, V. Gehanno, B. Rolland, A. Fargeix, C. Vannufel, F. Charlet, B. Bechevet, J.M. Bruneau, and P. Desré J. Magn. Soc. Japan 25 3-2 2001 414 419
15. T. Matsushita, A. Suzuki, Y. Kamitani, M. Okuda, and H. Naito Phys. Stat. Sol. (a) 133 1992 395 410
16. N. Yamada, E. Ohno, K. Nishiuchi, N. Akahira, and M. Terao J. Appl. Phys. 69 5 1991 2849 2856
17. J. Colmenero, I. Telleria, and A. Alegria Phys. Rev. B 38 1 1988 798 801
18. J.B. Park J. Electrochem. Soc. 154 2007 H139 H141
19. U. Russo IEEE Trans. Electron Dev. 53 2006 3032 3039
20. S. Raoux Appl. Phys. Lett. 95 2009 071910
21. J. Hegedus, and S.R. Elliott Nat. Mater. 7 2008 399 405
22. A. Fantini et al., Phase-change Material Assessment to Target PCM Embedded Applications, Presented at IMW, 2009.
23. L. Perniola Electrical behaviour of phase change memory cells based on GeTe IEEE Electron Dev. Lett. 31 2010 488 490
24. G. Bruns Appl. Phys. Lett. 95 2009 043108
25. A.L. Lacaita Solid-State Electr. 50 2006 24 31
26. C.F. Chen et al., Endurance Improvement of Ge2Sb2Te5-Based Phase Change Memory, Presented at IMW, 2009.
27. Y.H. Ha et al., An Edge Contact Type Cell for Phase Change RAM Featuring Very Low Power Consumption, Presented at VLSI, 2003.
28. M. Breitwitsch et al., Novel Lithography-Independent Pore Phase Change Memory, Presented at VLSI, 2007.
29. A. Pirovano et al., Scaling Analysis of Phase-Change Memory Technology, Presented at IEDM, 2003.
30. S.B. Kim, and H.S.P. Wong IEEE Electron Dev. Lett. 28 2007 697 699
31. D.S. Chao IEEE Electron Dev. Lett. 28 2007 871 873
32. G.T. Jeong et al., Process Technology for the Integration of High Density Phase Change RAM, Presented at ICICT, 2005.
33. O. Cueto et al., Analysis by Simulation of Amorphization Current in Phase Change Memory Applied to Pillar and GST Confined Type Cells, Presented at MAM, 2010.
34. S. Raoux IBM J. Res. Dev. 52 2008 465 479
35. D.H. Im et al., A Unified 7.5 nm Dash-Type Confined Cell for High Performance PRAM Device, Presented at IEDM, 2008.
36. T. Nirschl et al., Write Strategies for 2 and 4-bit Multi-Level Phase-Change Memory, Presented at IEDM, 2006.
37. K. Campbell patent, US2003/0146427A1, 2003.
38. M. Mitkova, Y. Wang, and P. Boolchand Phys. Rev. Lett. 83 19 1999 3848 3851
39. M. Kawasaki Solid State Ionics 123 1999 259
40. E. Bychkov Journal of Non-Crystalline Solids 208 1996 1
41. A. Pradel J. Phys. Condens. Matter 15 2003 S1561
42. M.N. Kozicki Microelectron. Eng. 63 2002 155 159
43. R. Waser Adv. Mater. 21 2009 2632 2663
44. Y. Hirose, and H. Hirose J. Appl. Phys. 47 6 1976 2767 2772
45. Hönigschmid et al., A Non-Volatile 2Mbit CBRAM Memory Core Featuring Advanced Read and Program Control, Presented at VLSI, 2006.
46. M.N. Kozicki et al., Presented at PCOS, 2006.
47. R. Bruchhaus, M. Honal, R. Symanczyk, and M. Kund J. Electrochem. Soc. 56 9 2009 H729 H733
48. M.N. Kozicki et al., Programmable Metallization Cell Memory Based on Ag-Ge-S and Cu-Ge-S Solid Electrolytes, Presented at NVMTS, 2005.
49. T. Sakamoto et al., Nonvolatile Solid-Electrolyte switch Embedded into Cu Interconnect, Presented at VLSI, 2009.