SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 95, Issue 7, 2009, Pages

Crystallization times of Ge-Te phase change materials as a function of composition

(4) Raoux, S a Cheng, H Y b Caldwell, M A c Wong, H S P d

a IBM T J WATSON RESEARCH CENTER (United States)

b MACRONIX INTERNATIONAL CO LTD (Taiwan)

c STANFORD UNIVERSITY (United States)

d Stanford University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITIONAL VARIATION; CRYSTALLIZATION TIME; DEPOSITED MATERIALS; FOUR-ORDER; GE CONCENTRATIONS; RECRYSTALLIZATIONS; SOLID STATE MEMORIES; STOICHIOMETRIC COMPOSITIONS;

AMORPHOUS FILMS; BUOYANCY; CRYSTALLIZATION; GERMANIUM; TELLURIUM COMPOUNDS;

PHASE CHANGE MATERIALS;

EID: 69249179244 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3212732 Document Type: Article

Times cited : (130)

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