Characteristics of the inter-poly Al2O3 dielectrics on NH3-nitrided bottom poly-Si for next-generation flash memories

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 A, 2005, Pages 1704-1710

  Chen, Yeong Yuh ^a   Chien, Chao Hsin ^b   Lou, Jen Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Al2O3; Aluminum oxide; Electron trapping; High k dielectric; Inter poly dielectric; IPD

Indexed keywords

ALUMINA; ANNEALING; AUGER ELECTRON SPECTROSCOPY; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; LEAKAGE CURRENTS; PERMITTIVITY; POLYSILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRON TRAPPING; HIGH-K DIELECTRICS; INTER-POLY DIELECTRICS (IPD); POST-DEPOSITION ANNEALING (PDA);

FLASH MEMORY;

EID: 21244460756     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.1704     Document Type: Article

References (24)

1. The International Technology Roadmap for Semiconductors, 2003.
2. S. Mori, E. Sakagami, H. Araki, Y. Kaneko, K. Narita, Y. Ohshima, N. Arai and K. Yoshikawa: IEEE Trans. Electron Devices 38 (1991) 386.
3. S. Ueno, H. Oda, N. Ajika, M. Inuishi and H. Miyoshi: Symp. VLSI Tech. Dig., 1996, p. 54.
4. Y. Y. Chen, J. C. Lou, T. H. Perng, C. W. Chen and C. H. Chien: Electron Devices and Materials Symp., 2003, p. 42.
5. J. Robertson: J. Vac. Sci. & Technol. B 18 (2000) 1785.
6. W.-H. Lee, J. T. Clemens, R. C. Keller and L. Manchanda: Symp. VLSI Tech. Dig., 1997, p. 117.
7. S. Meng, C. Basceri, B. W. Busch, G. Derderian and G. Sandhu: Appl. Phys. Lett. 83 (2003) 4429.
8. C.-L. Cha, E.-F. Chor, H. Gong, A. J. Bourdillon, Y.-M. Jia, J.-S. Pan, A.-Q. Zhang and L. Chan: Appl. Phys. Lett. 75 (1999) 355.
9. J. H. Klootwijk, H. van Kranenburg, P. H. Woerlee and H. Wallinga: IEEE Trans. Electron Devices 46 (1999) 1435.
10. M.-H. Cho, Y. S. Rho, H.-J. Choi, S. W. Nam, D.-H. Ko, J. H. Ku, H. C. Kang, D. Y. Noh, C. N. Whang and K. Jeong: J. Vac. Sci. & Technol. A 20 (2002) 865.
11. K. P. Bastos, R. P. Pezzi, L. Miotti, G. V. Soares, C. Driemeier, J. Morais, I. J. R. Baumvol, C. Hinkle and G. Lucovsky: Appl. Phys. Lett. 84 (2004) 97.
12. S. Zafar, A. Callegari, E. Gusev and M. V. Fischetti: Int. Electron Devices Meet. Tech. Dig., 2002, p. 517.
13. E. P. Gusev et al.: Int. Electron Devices Meet. Tech. Dig., 2001, p. 451.
14. E. Avni, O. Abramson, Y. Sonnenblick and J. Shappir: J. Electrochem. Soc. 35 (1988) 182.
15. A. R. Chowdhuri, C. G. Takoudis, R. F. Klie and N. D. Browning: Appl. Phys. Lett. 80 (2002) 4241.
16. R. F. Klie, N. D. Browning, A. R. Chowdhuri and C. G. Takoudis: Appl. Phys. Lett. 83 (2003) 1187.
17. C. Krug, E. B. O. da Rosa, R. M. C. de Almeida, J. Morais, I. J. R. Baumvol, T. D. M. Salgado and F. C. Stedile: Phys. Rev. Lett. 85 (2000) 4120.
18. C. S. Bhatia, G. Guthmiller and A. M. Spool: J. Vac. Sci. & Technol. A 7 (1989) 1298.
19. R. Degraeve, G. Groeseneken, R. Bellens, J. L. Ogier, M. Depas, P. J. Roussel and H. E. Maes: IEEE Trans. Electron Devices 45 (1998) 904.
20. T. Yamaguchi, R. Iijima, T. Ino, A. Nishiyama, H. Satake and N. Fukushima: Int. Electron Devices Meet. Tech. Dig., 2002, p. 621.
21. P. L. Chang, F. S. Yen, K. C. Cheng and H. L. Wen: Nano Lett. 1 (2001) 253.
22. M. Copel, E. Cartier, E. P. Gusev, S. Guha, N. Bojarczuk and M. Poppeller: Appl. Phys. Lett. 78 (2001) 2670.
23. K. Torri, Y. Shimamoto, S. Saito, O. Tonomura, M. Hiratani, Y. Manabe, M. Caymax and J. W. Maes: Symp. VLSI Tech. Dig., 2002, p. 188.
24. J. H. Lee, K. Koh, N. I. Lee, M. H. Cho, Y. K. Kim, J. S. Jeon, K. H. Cho, H. S. Shin, M. H. Kim, K. Fujihara, H. K. Kang and J. T. Moon: Int. Electron Devices Meet. Tech. Dig., 2000, p. 645.