Effect of fluorinated silicate glass passivation layer on electrical characteristics and dielectric reliabilities for the HfO2/SiON gate stacked nMOSFET

Microelectronic Engineering

Volumn 87, Issue 11, 2010, Pages 2241-2246

  Hsieh, Chih Ren ^a   Chen, Yung Yu ^b   Lou, Jen Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b LUNGHWA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Fluorinated silicate glass; HfO2; Threshold voltage instability

Indexed keywords

CONSTANT VOLTAGE STRESS; DIELECTRIC RELIABILITY; ELECTRICAL CHARACTERISTIC; FLUORINATED HFO; FLUORINATED SILICATE GLASS; INTERFACE TRAP DENSITY; NMOSFET; PASSIVATION LAYER; SION GATE DIELECTRICS; TRAP ASSISTED TUNNELING; TRAP GENERATION; ULTRATHIN GATE DIELECTRICS;

DIELECTRIC MATERIALS; FLUORINE; GATES (TRANSISTOR); GLASS; HAFNIUM; HAFNIUM COMPOUNDS; PASSIVATION; SILICATES; THRESHOLD VOLTAGE;

GATE DIELECTRICS;

EID: 77955517637     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.02.010     Document Type: Article

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