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Volumn 96, Issue 2, 2010, Pages

Improved performance and reliability for metal-oxide-semiconductor field-effect-transistor with fluorinated silicate glass passivation layer

(3) Hsieh, Chih Ren a Chen, Yung Yu b Lou, Jen Chung a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b LUNGHWA UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONSTANT VOLTAGE STRESS; DIELECTRIC RELIABILITY; ELECTRICAL CHARACTERISTIC; FIELD-EFFECT; FLUORINATED HFO; FLUORINATED SILICATE GLASS; INTERFACE TRAP DENSITY; METAL OXIDE SEMICONDUCTOR; PASSIVATION LAYER; SION GATE DIELECTRICS; TRAP ASSISTED TUNNELING; TRAP GENERATION; ULTRATHIN GATE DIELECTRICS;

FLUORINE; GATE DIELECTRICS; GATES (TRANSISTOR); GLASS; HAFNIUM; HAFNIUM COMPOUNDS; SILICATES;

PASSIVATION;

EID: 74549123285 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3279140 Document Type: Article

Times cited : (12)

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