Extraction of interface state density of Pt/p-strained-Si Schottky diode

Thin Solid Films

Volumn 335, Issue 1-2, 1998, Pages 142-145

  Chattopadhyay, S ^a   Bera, L K ^a   Ray, S K ^a   Bose, P K ^b   Maiti, C K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b JADAVPUR UNIVERSITY   (India)

Author keywords

Barrier height; Interface state density; Schottky diode; Strained Si; Surface potential

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONTACTS; ELECTRIC RESISTANCE; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS); PLATINUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES;

CAPACITANCE-VOLTAGE CHARACTERIZATION; SOFTWARE PACKAGE SEMICAD;

THIN FILMS;

EID: 0032307621     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00892-X     Document Type: Article

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