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Applied Surface Science

Volumn 123-124, Issue , 1998, Pages 120-125

A comparison of S-passivation of III-V (001) surfaces using (NH 4 ) 2 S x and S 2 Cl 2

(8) Gnoth, D N a Wolfframm, D a Patchett, A b Hohenecker, S b Zahn, D R T b Leslie, A c McGovern, I T c Evans, D A d

a GLYNDWR UNIVERSITY (United Kingdom)

b CHEMNITZ UNIVERSITY OF TECHNOLOGY (Germany)

c TRINITY COLLEGE DUBLIN (Ireland)

d ABERYSTWYTH UNIVERSITY (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM COMPOUNDS; AMORPHOUS MATERIALS; ANNEALING; BINDING ENERGY; ELECTRON ENERGY LEVELS; ETCHING; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; SULFUR COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

AMMONIUM SULFIDE; CORE LEVEL EMISSION SPECTROSCOPY; SULFUR CHLORIDE;

SURFACE TREATMENT;

EID: 18344400045 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(97)00424-8 Document Type: Article

Times cited : (30)

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