Structural and transport properties of InN grown on GaN by MBE

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1811-1814

  Wang, Kejia ^a   Kosel, Thomas ^a   Jena, Debdeep ^a  

^a University of Notre Dame   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CHARACTERIZATION; FLUX RATIO; GAN SUBSTRATE; GROWTH WINDOW; HALL EFFECT MEASUREMENT; HIGH DISLOCATION DENSITY; HIGH ELECTRON MOBILITY; LIMITING FACTORS; STRONG CORRELATION; STRUCTURAL QUALITIES; SUBSTRATE TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPE;

CRYSTAL GROWTH; ELECTRON MICROSCOPES; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; HALL MOBILITY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SINGLE CRYSTALS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES; X RAY DIFFRACTION;

GALVANOMAGNETIC EFFECTS;

EID: 77951240168     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778664     Document Type: Conference Paper

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