High-barrier rectifying contacts on undoped ZnO films with (NH 4)2Sx treatment owing to Fermi-level pinning

Journal of Physics D: Applied Physics

Volumn 42, Issue 7, 2009, Pages

  Lin, Yow Jon ^a   Chang, Shih Sheng ^a   Chang, Hsing Cheng ^b   Liu, Yang Chun ^a  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CORE-LEVEL PEAKS; CURRENT-VOLTAGE MEASUREMENTS; FERMI-LEVEL PINNING; NI CONTACTS; PULSED-LASER DEPOSITIONS; SURFACE DIPOLES; VACANCY DEFECTS; VACANCY DENSITIES; VALENCE-BAND MAXIMUMS; X-RAY PHOTOELECTRON SPECTROSCOPIES; XPS; XPS MEASUREMENTS; ZNO; ZNO FILMS; ZNO SURFACES;

DISTILLATION; FERMIONS; METALLIC FILMS; PULSED LASER DEPOSITION; SEMICONDUCTING ZINC COMPOUNDS; THREE DIMENSIONAL; VACANCIES; ZINC; ZINC OXIDE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 63749123493     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/7/075308     Document Type: Article

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