Photoluminescence of plasma enhanced chemical vapor deposition amorphous silicon oxide with silicon nanocrystals grown at different fluence ratios and substrate temperatures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 2 A, 2006, Pages 1040-1043

  Lin, Chun Jung ^a   Lin, Chi Kuan ^a   Chang, Chih Wei ^a   Chueh, Yu Lun ^b   Kuo, Hao Chung ^a   Diau, Eric Wei Guang ^a   Chou, Li Jen ^b   Lin, Gong Ru ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Lifetime; Photoluminescence; Plasma enhanced chemical vapor deposition; Si rich silicon dioxide; Silicon nanocrystals

Indexed keywords

NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PRECIPITATION (CHEMICAL); SUBSTRATES; THERMAL EFFECTS;

LIFETIME; NANOCRYSTALLITE SI CLUSTER; SI-RICH SILICON DIOXIDE; SILICON NANOCRYSTALS;

AMORPHOUS SILICON;

EID: 32244447212     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.1040     Document Type: Article

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