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Volumn 11, Issue 3, 2011, Pages 664-667

Epitaxial growth of high quality nonpolar InN films on LiGaO2 substrates

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; AS-GROWN; BAND-EDGE EMISSIONS; EPITAXIAL RELATIONSHIPS; GROWTH STAGES; HIGH EFFICIENCY; HIGH PHASE PURITY; HIGH QUALITY; IN-PLANE; INN FILMS; NEW SYSTEM; NON-POLAR; NUCLEATION LAYERS; PHOTOLUMINESCENCE SPECTRUM; SMOOTH SURFACE; THREADING DISLOCATION DENSITIES;

EID: 79952140656     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg1007473     Document Type: Article
Times cited : (21)

References (33)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.