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Volumn 301-302, Issue SPEC. ISS., 2007, Pages 517-520
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RF-MBE growth of a-plane InN on r-plane sapphire with a GaN underlayer
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Author keywords
A1. X ray diffraction; A3. Molecular beam epitaxy; B1. Nitride
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Indexed keywords
EXCITATION INTENSITY;
FRANZ-KELDYSH EFFECT;
LONGITUDINAL OPTICAL (LO);
MICRO-RAMAN SCATTERING MEASUREMENTS;
GALLIUM NITRIDE;
PHOTOLUMINESCENCE;
RAMAN SCATTERING;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
MOLECULAR BEAM EPITAXY;
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EID: 33947363391
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2006.11.072 Document Type: Article |
Times cited : (22)
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References (11)
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