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Volumn 301-302, Issue SPEC. ISS., 2007, Pages 517-520

RF-MBE growth of a-plane InN on r-plane sapphire with a GaN underlayer

Author keywords

A1. X ray diffraction; A3. Molecular beam epitaxy; B1. Nitride

Indexed keywords

EXCITATION INTENSITY; FRANZ-KELDYSH EFFECT; LONGITUDINAL OPTICAL (LO); MICRO-RAMAN SCATTERING MEASUREMENTS;

EID: 33947363391     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.072     Document Type: Article
Times cited : (22)

References (11)
  • 10
    • 33947397081 scopus 로고    scopus 로고
    • Willardson R.K., and Weber E.R. (Eds), Academic Press (Chapter 2)
    • Garmire E., and Kost A. In: Willardson R.K., and Weber E.R. (Eds). Nonlinear Optics in Semiconductors I Vol. 58 (1999), Academic Press 88 (Chapter 2)
    • (1999) Nonlinear Optics in Semiconductors I , vol.58 , pp. 88
    • Garmire, E.1    Kost, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.