Room-temperature epitaxial growth of AlN on atomically flat Mg Al 2O4 substrates

Applied Physics Letters

Volumn 89, Issue 18, 2006, Pages

  Li, Guoqiang ^a   Ohta, Jitsuo ^a,b   Kobayashi, Atsushi ^a   Fujioka, Hiroshi ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; HIGH ENERGY ELECTRON DIFFRACTION; IN SITU PROCESSING; MAGNESIUM COMPOUNDS; SUBSTRATES; THERMAL EFFECTS; X RAY DIFFRACTION;

IN SITU REFLECTION; INTERFACIAL REACTION; ROOM TEMPERATURE EPITAXIAL GROWTH; X RAY REFLECTIVITY CHARACTERIZATION;

ALUMINUM NITRIDE;

EID: 33750688223     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2372685     Document Type: Article

References (27)

1. Y. Taniyasu, M. Kasu, and T. Makimoto, Nature (London) 441, 325 (2006).
2. T. W. Kim, N. Matsuki, J. Ohta, and H. Fujioka, Appl. Phys. Lett. 88, 121916 (2006).
3. D. Walker, X. Zhang, A. Saxler, P. Kung, and M. Razeghi, Appl. Phys. Lett. 70, 949 (1997).
4. M. Mesrine, N. Grandjean, and J. Massies, Appl. Phys. Lett. 72, 350 (1998).
5. S. Ruvimov, Z. Liliental-Weber, T. Joel, W. Ager III, J. Washburn, J. Krueger, C. Kisielowski, E. R. Weber, H. Amano, and I. Akasaki, Appl. Phys. Lett. 69, 990 (1996).
6. K. Hiramatsu, T. Detchprohm, and I. Akasaki, Jpn. J. Appl. Phys., Part 1 32, 1528 (1993).
7. D. C. Reynolds, D. C. Look, B. Jogai, J. E. Hoelscher, R. E. Sherriff, and R. J. Molnar, J. Appl. Phys. 88, 1460 (2000).
8. W. J. Tropf and M. E. Thomas, Handbook of Optical Constants of Solids, 2nd ed. (Academic, New York, 1991), p. 883.
9. N. W. Grimes and E. A. Al-Ajaj, J. Phys.: Condens. Matter 4, 6375 (1992).
10. R. D. Vispute, H. Wu, and J. Narayan, Appl. Phys. Lett. 67, 1549 (1995).
11. C. J. Scozzie, A. J. Lelis, F. B. McLean, R. D. Vispute, S. Choopun, A. Patel, R. P. Sharma, and T. Venkatesan, J. Appl. Phys. 86, 4052 (1999).
12. R. D. Vispute, V. Talyansky, R. P. Sharma, S. Choopun, M. Downes, T. Venkatesan, K. A. Jones, A. Iliadis, M. A. Khan, and J. W. Yang, Appl. Phys. Lett. 71, 102 (1997).
13. R. D. Vispute, J. Narayan, and J. D. Budai, Thin Solid Films 299, 94 (1997).
14. J. Ohta, H. Fujioka, S. Ito, and M. Oshima, Appl. Phys. Lett. 81, 2373 (2002).
15. J. Ohta, H. Fujioka, and M. Oshima, Appl. Phys. Lett. 83, 3060 (2003).
16. A. Kobayashi, H. Fujioka, J. Ohta, and M. Oshima, Jpn. J. Appl. Phys., Part 1 43, 53 (2004).
17. Y. Kawaguchi, J. Ohta, A. Kobayashi, and H. Fujioka, Appl. Phys. Lett. 87, 221907 (2005).
18. J. Ohta, H. Fujioka, and M. Oshima, Appl. Phys. Lett. 83, 3060 (2003).
19. A. Kobayashi, J. Ohta, H. Fujioka, K. Fujiwara, and A. Ishii, Appl. Phys. Lett. 88, 181907 (2006).
20. S. Inoue, K. Okamoto, N. Matsuki, T. W. Kim, and H. Fujioka, Appl. Phys. Lett. 88, 261910 (2006).
21. J. Bai, M. Dudley, W. H. Sun, H. M. Wang, and M. Asif Khan, Appl. Phys. Lett. 88, 051903 (2006).
22. F. Natali, F. Semond, J. Massies, D. Byrne, S. Laügt, O. Tottereau, P. Vennegues, E. Dogheche, and E. Dumont, Appl. Phys. Lett. 82, 1386 (2003).
23. Y. Wu, A. Hanlon, J. F. Kaeding, R. Sharma, P. T. Fini, S. Nakamura, and J. S. Speck, Appl. Phys. Lett. 84, 912 (2004).
24. L. G. Parratt, Phys. Rev. 95, 359 (1954).
25. L. Nevot and P. Croce, Rev. Phys. Appl. 15, 761 (1980).
26. N. Nepal, J. Shakya, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 88, 133113 (2006).
27. J. Li, K. B. Nam, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 81, 3365 (2002).