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Volumn 93, Issue 17, 2008, Pages

Molecular beam epitaxy and structural anisotropy of m-plane InN grown on free-standing GaN

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL GROWTH; DEFECT STRUCTURES; GALLIUM NITRIDE; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; STACKING FAULTS;

EID: 55149085488     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3001806     Document Type: Article
Times cited : (45)

References (26)
  • 2
    • 4944252819 scopus 로고    scopus 로고
    • 0003-6951 10.1063/1.1787615.
    • S. P. Fu and Y. F. Chen, Appl. Phys. Lett. 0003-6951 10.1063/1.1787615 85, 1523 (2004).
    • (2004) Appl. Phys. Lett. , vol.85 , pp. 1523
    • Fu, S.P.1    Chen, Y.F.2
  • 6
    • 34247863807 scopus 로고    scopus 로고
    • 0021-8979 10.1063/1.2722731.
    • C. G. Van de Walle and D. Segev, J. Appl. Phys. 0021-8979 10.1063/1.2722731 101, 081704 (2007).
    • (2007) J. Appl. Phys. , vol.101 , pp. 081704
    • Van De Walle, C.G.1    Segev, D.2
  • 13
    • 33750316327 scopus 로고    scopus 로고
    • 0295-5075 10.1209/epl/i2006-10250-2.
    • D. Segev and C. G. Van de Walle, Europhys. Lett. 0295-5075 10.1209/epl/i2006-10250-2 76, 305 (2006).
    • (2006) Europhys. Lett. , vol.76 , pp. 305
    • Segev, D.1    Van De Walle, C.G.2
  • 19
    • 0042767997 scopus 로고    scopus 로고
    • 0003-6951 10.1063/1.1592309.
    • K. Xu and A. Yoshikawa, Appl. Phys. Lett. 0003-6951 10.1063/1.1592309 83, 251 (2003).
    • (2003) Appl. Phys. Lett. , vol.83 , pp. 251
    • Xu, K.1    Yoshikawa, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.