Room-temperature epitaxial growth of GaN on atomically flat MgAl 2O4 substrates by pulsed-laser deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 17-19, 2006, Pages

  Li, Guoqiang ^a   Ohta, Jitsuo ^a,b   Okamoto, Koichiro ^a   Kobayashi, Atsushi ^a   Fujioka, Hiroshi ^a,b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Atomically flat surface; Gan; Mgal2o4; Pulsed laser deposition

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; MAGNESIUM COMPOUNDS; PULSED LASER DEPOSITION; SUBSTRATES; THERMAL EFFECTS;

ATOMICALLY FLAT SURFACE; EPILAYERS; MGAL2O4; TERRACE STRUCTURE;

GALLIUM NITRIDE;

EID: 33745297566     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L457     Document Type: Article

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