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Applied Physics Letters

Volumn 56, Issue 10, 1990, Pages 907-909

Effect of ozone annealing on the dielectric properties of tantalum oxide thin films grown by chemical vapor deposition

(2) Isobe, Chiharu a Saitoh, Masaki a

a SONY CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000508487 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.103323 Document Type: Article

Times cited : (57)

References (7)

1
- 0020101518
- (1982) IEEE Trans. Electron Devices , vol.ED‐29 , pp. 368
- Ohta, K.¹ Yamada, K.² Shimizu, R.³ Tarui, Y.⁴

2
- 14344283341
- (IEEE, Piscataway, NJ)
- (1983) Symposium on VLSI Technology Digest of Technical Papers , pp. 86
- Kato, T.¹ Itoh, T.² Taguchi, M.³ Nakamura, T.⁴ Ishikawa, H.⁵

3
- 36549104227
- (1986) J. Appl. Phys. , vol.59 , pp. 1587
- Oehrlein, G.S.¹

4
- 0022914476
- (Business Center for Academic Societies Japan, Tokyo)
- (1986) Extended Abstracts of the 18th International Conference on Solid State Devices and Materials , pp. 253
- Hashimoto, C.¹ Oikawa, H.² Honda, N.³

5
- 0023570407
- (Business Center for Academic Societies Japan, Tokyo)
- (1987) Extended Abstracts of the 19th Conference on Solid State Devices and Materials , pp. 215
- Shinriki, H.¹ Nishioka, Y.² Mukai, K.³

6
- 0024000206
- (1988) Jpn. J. Appl. Phys. , vol.27 , pp. 506
- Matsui, M.¹ Oka, S.² Yamagishi, K.³ Kuroiwa, K.⁴ Tarui, Y.⁵

7
- 0022983336
- (IEEE, Los Angeles), No. 32
- (1986) International Electron Devices Meeting Technical Digest , pp. 680
- Saitoh, M.¹ Mori, T.² Tamura, H.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.