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Volumn 26, Issue 3, 2011, Pages 542-549
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Quantitative depth profiling of boron and arsenic ultra low energy implants by pulsed rf-GD-ToFMS
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Author keywords
[No Author keywords available]
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Indexed keywords
ANALYTICAL CHARACTERIZATION;
CALIBRATION PROCEDURE;
CRITICAL EVALUATION;
DEPTH PROFILE;
DEPTH RESOLUTION;
GRAZING INCIDENCE;
ION DOSE;
ION ENERGIES;
MATRIX;
MULTI-LAYERED;
NANOMETRES;
PULSED GLOW DISCHARGE;
QUALITATIVE ANALYSIS;
QUANTITATIVE DEPTH PROFILING;
RADIO FREQUENCIES;
REFERENCE TECHNIQUE;
TIME OF FLIGHT MASS SPECTROMETRY;
ULTRALOW ENERGY;
X RAY FLUORESCENCE;
ARSENIC;
BORON;
BORON COMPOUNDS;
DEPTH PROFILING;
GLOW DISCHARGES;
IONS;
SECONDARY ION MASS SPECTROMETRY;
SPECTROMETRY;
QUALITY CONTROL;
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EID: 79951873343
PISSN: 02679477
EISSN: 13645544
Source Type: Journal
DOI: 10.1039/c0ja00197j Document Type: Article |
Times cited : (20)
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References (30)
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