Grazing incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for the characterization of ultrashallow arsenic distribution in silicon

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 28, Issue 1, 2010, Pages

  Pepponi, G ^a   Giubertoni, D ^a   Bersani, M ^a   Meirer, F ^b,d   Ingerle, D ^b   Steinhauser, G ^b   Streli, C ^b   Hoenicke, P ^c   Beckhoff, B ^c  

^a ITC IRST   (Italy)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^c PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^d SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE-DEPENDENT; DOPANT DEPTH DISTRIBUTION; FLUENCES; FLUORESCENCE SIGNALS; GRAZING INCIDENCE; INSTRUMENTAL NEUTRON ACTIVATION ANALYSIS; LEAST-SQUARE FITTING; MATRIX EFFECTS; SECONDARY ION MASS SPECTROSCOPY; SIMS PROFILE; SOFT X-RAY; SPUTTERING RATE; TECHNOLOGY DEVELOPMENT; ULTRA SHALLOW JUNCTION; X RAY FLUORESCENCE;

ARSENIC; DEPTH PROFILING; FLUORESCENCE; NEUTRON ACTIVATION ANALYSIS; SECONDARY EMISSION; SPUTTERING; TECHNOLOGICAL FORECASTING; X RAY ANALYSIS; X RAY LITHOGRAPHY;

SECONDARY ION MASS SPECTROMETRY;

EID: 77949374304     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3292647     Document Type: Conference Paper

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