Ultra-low energy SIMS analysis of boron deltas in silicon

Journal of Crystal Growth

Volumn 245, Issue 1-2, 2002, Pages 1-8

  Baboux, N ^a   Dupuy, J C ^a   Prudon, G ^a   Holliger, P ^b   Laugier, F ^b   Papon, A M ^b   Hartmann, J M ^b  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b CEA GRENOBLE   (France)

Author keywords

A1. Secondary ion mass spectrometry; A3. Molecular beam epitaxy; A3. Reduced pressure chemical vapor deposition; B1. Boron doping

Indexed keywords

CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

DEPTH RESOLUTION PARAMETERS;

MOLECULAR BEAM EPITAXY;

EID: 0036836730     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01643-3     Document Type: Article

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