Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 28, Issue 1, 2010, Pages

  Giubertoni, Damiano ^a   Iacob, Erica ^a   Hoenicke, P ^b   Beckhoff, B ^b   Pepponi, Giancarlo ^a   Gennaro, Salvatore ^a   Bersani, Massimo ^a  

^a ITC IRST   (Italy)

^b PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BORON IMPLANTS; DEPTH CALIBRATION; EROSION RATES; GRAZING INCIDENCE; HIGH DOSE; ION SPUTTERING; OBLIQUE INCIDENCE; PRIMARY BEAMS; PROFILE SHAPES; SECONDARY IONS; SINGLE-CRYSTALLINE; SOFT X-RAY; SPUTTERING CONDITIONS; ULTRA LOW ENERGY; X RAY FLUORESCENCE; X-RAY FLUORESCENCE TECHNIQUE;

BORON; BORON COMPOUNDS; FLUORESCENCE; IONS; SECONDARY EMISSION; SECONDARY ION MASS SPECTROMETRY; SPECTROMETRY; SPUTTERING; VACUUM; X RAY LITHOGRAPHY;

X RAY ANALYSIS;

EID: 77949404349     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3292638     Document Type: Conference Paper

References (15)

1. C. W. Magee, D. Jacobson, and H. -J. Gossmann, J. Vac. Sci. Technol. B JVTBD9 1071-1023 18, 489 (2000). 10.1116/1.591217
2. W. Vandervorst, T. Jannsens, R. Loo, M. Caymax, I. Peytier, R. Lindsay, J. Fruhauf, A. Bergmaier, and G. Dollinger, Appl. Surf. Sci. ASUSEE 0169-4332 203-204, 317 (2003).
3. T. H. Buyuklimanli, C. W. Magee, J. W. Marino, and S. R. Walther, J. Vac. Sci. Technol. B JVTBD9 1071-1023 24, 408 (2006). 10.1116/1.2163879
4. W. Vandervorst, Appl. Surf. Sci. ASUSEE 0169-4332 231-232, 618 (2004). 10.1016/j.apsusc.2004.03.125
5. K. Wittmaack, Surf. Interface Anal. SIANDQ 0142-2421 26, 290 (1998). 10.1002/(SICI)1096-9918(199804)26:4<290::AID-SIA373>3.0.CO;2-9
6. T. Janssens and W. Vandervorst, in Proceedings of the 12th Secondary Ion Mass Spectrometry International Conference, edited by, P. Bertrand, H. -N. Migeon, and, H. W. Werner, (Elsevier, New York, 2000), p. 401.
7. M. Bersani, D. Giubertoni, E. Iacob, M. Barozzi, S. Pederzoli, L. Vanzetti, and M. Anderle, Appl. Surf. Sci. ASUSEE 0169-4332 252, 7315 (2006). 10.1016/j.apsusc.2006.02.282
8. Z. X. Jiang and P. F. A. Alkemade, J. Vac. Sci. Technol. B JVTBD9 1071-1023 16, 1971 (1998). 10.1116/1.590116
9. K. Wittmaack, Appl. Surf. Sci. ASUSEE 0169-4332 203-204, 20 (2003). 10.1016/S0169-4332(02)00640-2
10. B. Beckhoff, R. Fliegauf, M. Kolbe, M. Müller, J. Weser, and G. Ulm, Anal. Chem. ANCHAM 0003-2700 79, 7873 (2007). 10.1021/ac071236p
11. D. Windt, Comput. Phys. CPHYE2 0894-1866 12, 360 (1998). 10.1063/1.168689
12. B. Beckhoff, J. Anal. At. Spectrom. JASPE2 0267-9477 23, 845 (2008). 10.1039/b718355k
13. R. M. Bradley and J. M. E. Harper, J. Vac. Sci. Technol. A JVTAD6 0734-2101 6, 2390 (1988). 10.1116/1.575561
14. W. L. Chan and E. Chason, J. Appl. Phys. JAPIAU 0021-8979 101, 121301 (2007). 10.1063/1.2749198
15. See: http://www.srim.org.