Depth profile characterization of ultra shallow junction implants

Analytical and Bioanalytical Chemistry

Volumn 396, Issue 8, 2010, Pages 2825-2832

  Hönicke, Philipp ^a   Beckhoff, Burkhard ^a   Kolbe, Michael ^a   Giubertoni, Damiano ^b   Van Den Berg, Jaap ^c   Pepponi, Giancarlo ^b  

^a PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^b FONDAZIONE BRUNO KESSLER   (Italy)

^c UNIVERSITY OF SALFORD   (United Kingdom)

Author keywords

Elemental depth profile; Grazing incidence X ray fluorescence analysis; Ultra shallow junctions

Indexed keywords

AB INITIO CALCULATIONS; ANALYSIS TECHNIQUES; ANGLE OF INCIDENCE; ANGULAR MEASUREMENTS; CMOS TECHNOLOGY; CONCENTRATION PROFILES; DEPTH CHANGES; DEPTH PROFILE; ELECTRON STORAGE RING; FLUENCES; FLUORESCENCE RADIATIONS; GRAZING INCIDENCE; IMPLANTATION ENERGIES; NEAR-SURFACE LAYERS; PHYSIKALISCH-TECHNISCHE BUNDESANSTALT; POTENTIAL TOOL; SI WAFER; SOFT X-RAY RANGE; SPECTRAL PURITY; ULTRA SHALLOW JUNCTION; UNDULATOR RADIATION; X RAY FLUORESCENCE; X RAY FLUORESCENCE ANALYSIS; X-RAY STANDING WAVES;

ARSENIC; BORON; BORON COMPOUNDS; DEPTH PROFILING; FLUORESCENCE; PLASMAS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SENSORS; SILICON WAFERS; STANDING WAVE METERS; STORAGE RINGS; X RAY LITHOGRAPHY; X RAYS;

X RAY ANALYSIS;

EID: 77951298195     PISSN: 16182642     EISSN: 16182650     Source Type: Journal    
DOI: 10.1007/s00216-009-3266-y     Document Type: Article

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