Ge layer transfer to Si for photovoltaic applications

Materials Research Society Symposium Proceedings

Volumn 681, Issue , 2001, Pages 63-68

  Zahler, James M ^a   Ahn, Chang Geun ^a   Zaghi, Shahrooz ^a   Atwater, Harry A ^a   Chu, Charles ^b   Iles, Peter ^b  

^a California Institute of Technology   (United States)

^b TECSTAR Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; GERMANIUM; HYDROPHOBICITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICON; SURFACE ROUGHNESS; WAFER BONDING;

LAYER SPLITTING; METAL CONTAMINATION; METALLIC BONDING LAYER; SINGLE CRYSTAL FILMS;

PHOTOVOLTAIC CELLS;

EID: 34249892164     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-681-i4.5     Document Type: Conference Paper

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