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Applied Physics Letters

Volumn 96, Issue 10, 2010, Pages

Low temperature germanium to silicon direct wafer bonding using free radical exposure

(6) Byun, Ki Yeol a Ferain, Isabelle a Fleming, Pete b Morris, Michael a,b Goorsky, Mark c Colinge, Cindy a

a UNIVERSITY COLLEGE CORK (Ireland)

b UNIVERSITY COLLEGE CORK (Ireland)

c UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE RESOLVED X RAY PHOTOELECTRON SPECTROSCOPY; BONDED INTERFACE; BONDING MECHANISM; DIRECT WAFER BONDING; GE SURFACES; IN-SITU; IN-VACUUM; LOW TEMPERATURE DIRECT BONDING; LOW TEMPERATURES; NITROGEN RADICAL; WAFER BONDING METHODS;

FREE RADICALS; GERMANIUM; IMAGING TECHNIQUES; OXYGEN; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SURFACE CHEMISTRY; X RAY PHOTOELECTRON SPECTROSCOPY;

WAFER BONDING;

EID: 77949712530 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3360201 Document Type: Article

Times cited : (43)

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