Crystallographic properties of Ge/Si heterojunctions fabricated by wet wafer bonding

Journal of Electronic Materials

Volumn 39, Issue 8, 2010, Pages 1248-1255

  Kanbe, Hiroshi ^a   Hirose, Mami ^a,b   Ito, Tatsuya ^a   Taniwaki, Masafumi ^a  

^a KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b Nissei Bldg   (Japan)

Author keywords

Energy dispersive x ray spectroscopy; Ge Si heterojunction; Photodiode application; Transmission electron microscopy; Wet wafer bonding

Indexed keywords

AMORPHOUS-LIKE; CRYSTALLOGRAPHIC PROPERTIES; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; GE/SI HETEROJUNCTION; HETERO INTERFACES; LATTICE SPACING; MODIFIED LAYER; TRANSITION LAYERS;

CRYSTAL DEFECTS; ENERGY DISPERSIVE SPECTROSCOPY; GERMANIUM; HETEROJUNCTIONS; PHOTODIODES; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY; X RAYS;

WAFER BONDING;

EID: 77954608092     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1228-y     Document Type: Article

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