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1
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21544474632
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Extreme selectivity in the liftoff of epitaxial GaAs films
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E. Yablonovitch, T. Gmitter, J. P. Harbison, and R. Bhatt, "Extreme selectivity in the liftoff of epitaxial GaAs films," Appl. Phys. Lett., vol. 51, pp. 2222-2224, 1987.
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2
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33748851966
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private communication
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S. Fike, private communication, 1995.
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Fike, S.1
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3
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36549092991
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Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates
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E. Yablonovitch, D. M. Hwang, T. J. Gmitter, L. T. Florez, and J. P. Harbison, "Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates," Appl. Phys. Lett., vol. 56, pp. 2419-2421, 1990.
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Harbison, J.P.5
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4
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85030054163
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Resonant cavity enhanced thin film AlGaAs/GaAs/AlGaAs LEDs with metal mirrors
-
submitted for publication
-
S. T. Wilkinson, N. M. Jokerst, and R. P. Leavitt, "Resonant cavity enhanced thin film AlGaAs/GaAs/AlGaAs LEDs with metal mirrors" Appl. Optics: Lasers, Photonics, Environmental Optics, submitted for publication.
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Appl. Optics: Lasers, Photonics, Environmental Optics
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Wilkinson, S.T.1
Jokerst, N.M.2
Leavitt, R.P.3
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5
-
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0028556060
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GaAs modulators on silicon ICs
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Lake Tahoe, July
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K. Goossen, J. Walker, L. D'Asaro, S. Hui, J. Cunningham, Y. Jan, "GaAs modulators on silicon ICs," in Proc. IEEE LEOS Summer Topical Meeting on Smart Pixels, Lake Tahoe, July, 1993, p. 10.
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Proc. IEEE LEOS Summer Topical Meeting on Smart Pixels
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Goossen, K.1
Walker, J.2
D'Asaro, L.3
Hui, S.4
Cunningham, J.5
Jan, Y.6
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6
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33748863068
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Large arrays of spatial light modulators hybridized to silicon integrated circuits
-
postdeadline paper, Salt Lake City, Mar. 13-16
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T. Worchesky, K. Ritter, B. Lane, "Large arrays of spatial light modulators hybridized to silicon integrated circuits," postdeadline paper, Optical Computing, Salt Lake City, Mar. 13-16, 1995.
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Optical Computing
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Worchesky, T.1
Ritter, K.2
Lane, B.3
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7
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0001574596
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Vertical-cavity surface-emitting lasers integrated onto silicon substrates by PdGe contacts
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July
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H. Fathollahnejad, D. Mathine, R. Droopad, G. Maracas, and S. Daryanani, "Vertical-cavity surface-emitting lasers integrated onto silicon substrates by PdGe contacts," Electron. Lett., vol. 30, no. 15, p. 1235-1236, July 1994.
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Electron. Lett.
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Fathollahnejad, H.1
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Maracas, G.4
Daryanani, S.5
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8
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33748878685
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private communication
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N. Jokerst, private communication, 1990.
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(1990)
-
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Jokerst, N.1
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9
-
-
0026366566
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Alignable, epitaxial liftoff of GaAs Materials with selective deposition using polyimide diaphragms
-
C. Camperi-Ginestet, M. Hargis, N. M. Jokerst, and M. Allen, "Alignable, epitaxial liftoff of GaAs Materials with selective deposition using polyimide diaphragms," IEEE Phot. Tech. Lett., vol. 3, pp. 1123-1126, 1991.
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IEEE Phot. Tech. Lett.
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Camperi-Ginestet, C.1
Hargis, M.2
Jokerst, N.M.3
Allen, M.4
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10
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-
0025782054
-
GalnAs/InP pin photodetectors integrated with glass waveguides
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A. Ti-Yan, W. K. Chan, C. K. Nguyen, T. J. Gmitter, R. Bhat, and J. L. Jackel, "GalnAs/InP pin photodetectors integrated with glass waveguides," Electron. Lett., vol. 27, pp. 87-89, 1991.
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Ti-Yan, A.1
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Gmitter, T.J.4
Bhat, R.5
Jackel, J.L.6
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11
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-
0043223819
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Single-crystal thin film InP: Fabrication and absorption measurements
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G. Augustine, N. M. Jokerst, and A. Rohatgi, "Single-crystal thin film InP: Fabrication and absorption measurements," Appl. Phys. Lett., vol. 61, pp. 1429-1431, 1992.
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Appl. Phys. Lett.
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Augustine, G.1
Jokerst, N.M.2
Rohatgi, A.3
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12
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0001066332
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2/Si and glass substrates
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2/Si and glass substrates," J. Appl. Phys., vol. 66, pp. 459-462, 1989.
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J. Appl. Phys.
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Klem, J.F.1
Jones, E.D.2
Myers, D.R.3
Lott, J.A.4
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13
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0041812950
-
GaAs/AlGaAs multiple-quantum-well vertical optical modulator on glass using the epitaxial lift-off technique
-
L. Buydens, P. De Dobbelaere, P. Demeester, I. Pollentier, and P. Van Daele, "GaAs/AlGaAs multiple-quantum-well vertical optical modulator on glass using the epitaxial lift-off technique," Opt. Lett., vol. 16, pp. 916-918, 1991.
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Opt. Lett.
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Buydens, L.1
De Dobbelaere, P.2
Demeester, P.3
Pollentier, I.4
Van Daele, P.5
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14
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36449001732
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Direct measurement of near-band-gap electrorefraction in AlGaAs/GaAs/AlGaAs thin-film structures
-
May 24
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K. H. Calhoun and N. M. Jokerst, "Direct measurement of near-band-gap electrorefraction in AlGaAs/GaAs/AlGaAs thin-film structures," Appl. Phys. Lett., vol. 62, May 24, 1987.
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Appl. Phys. Lett.
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Calhoun, K.H.1
Jokerst, N.M.2
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15
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0025388551
-
Epitaxial lift-off GaAs LEDs to Si for fabrication of opto-electronic integrated circuits
-
I. Pollentier, P. Demeester, A. Ackaert, L. Buydens, P. Van Daele, and R. Baets, "Epitaxial lift-off GaAs LEDs to Si for fabrication of opto-electronic integrated circuits," Electr. Lett., vol. 26, pp. 193-194, 1990.
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Van Daele, P.5
Baets, R.6
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16
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0024611749
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Double heterostructure GaAs/AlGaAs Thin film diode lasers on glass substrates
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E. Yablonovitch, E. Kapon, T. J. Gmitter, C. P. Yun, and R. Bhat, "Double heterostructure GaAs/AlGaAs Thin film diode lasers on glass substrates," IEEE Photon. Technol. Lett., vol. 1, pp. 41-42, 1989.
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IEEE Photon. Technol. Lett.
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Bhat, R.5
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17
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0027677486
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Epitaxial liftoff GaAs/AlGaAs metal-semiconductor-metal photodetectors with back passivation
-
Oct.
-
M. Hargis, R. Carnahan, J. Brown, and N. M. Jokerst, "Epitaxial liftoff GaAs/AlGaAs metal-semiconductor-metal photodetectors with back passivation," IEEE Photon. Technol. Lett., vol. 5, no. 10, pp. 1210-1212, Oct. 1993.
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IEEE Photon. Technol. Lett.
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Hargis, M.1
Carnahan, R.2
Brown, J.3
Jokerst, N.M.4
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18
-
-
0028514483
-
InP/InGaAs resonant cavity enhanced photodetector and light emitting diode with external mirrors on Si
-
Sept.
-
A. Salavador, F. Huang, B. Sverdlov, A. Botchkarev, and H. Morkoc, "InP/InGaAs resonant cavity enhanced photodetector and light emitting diode with external mirrors on Si," EIectr. Lett., vol. 30, no. 18, pp. 1527-1528, Sept. 1994,
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Salavador, A.1
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Morkoc, H.5
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19
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-
0027663911
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Resonant cavity light emitting diode and detector using epitaxial liftoff
-
Sept.
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B. Corbett, L. Considine, S. Walsh, and W. Kelly, "Resonant cavity light emitting diode and detector using epitaxial liftoff," IEEE Photon. Technol. Lett., vol 5, no. 9, pp. 1041-1043, Sept. 1993.
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IEEE Photon. Technol. Lett.
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Corbett, B.1
Considine, L.2
Walsh, S.3
Kelly, W.4
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20
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0027701541
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Narrow bandwidth long wavelength resonant cavity photodiodes
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Nov.
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B. Corbett, L. Considine, S. Walsh, and W. Kelly, "Narrow bandwidth long wavelength resonant cavity photodiodes," Electr. Lett., vol. 29, no. 24, pp. 2148-2149, Nov. 1993,
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Corbett, B.1
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Kelly, W.4
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22
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36449003753
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Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures
-
Jan.
-
I. Schnitzer, E. Yablonovitch, C. Caneau, and T. J. Gmitter, "Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures," Appl. Phys. Lett., vol. 62, no. 2, pp. 131-133, Jan. 1993.
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Schnitzer, I.1
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Gmitter, T.J.4
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23
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51149220122
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30% external quantum efficiency from surface textured, thin film light emitting diodes
-
Oct.
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I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, "30% external quantum efficiency from surface textured, thin film light emitting diodes," Appl. Phys. Lett., vol. 63, no. 16, pp. 2174-2176, Oct. 1993.
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Scherer, A.5
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25
-
-
0028556058
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Silicon CMOS optical receiver circuit with integrated compound semiconductor thin film P-i-N detector
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Lake Tahoe, July
-
M. Lee, C. Camperi-Ginestet, M. Brooke, and N. Jokerst, "Silicon CMOS optical receiver circuit with integrated compound semiconductor thin film P-i-N detector," in Proc. IEEE LEOS Summer Topical Meeting Integrated Optoelectronics, Lake Tahoe, July, 1994, p. 58-59.
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Proc. IEEE LEOS Summer Topical Meeting Integrated Optoelectronics
, pp. 58-59
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Lee, M.1
Camperi-Ginestet, C.2
Brooke, M.3
Jokerst, N.4
-
26
-
-
0029535914
-
155 Mb/s quasi-monolithic, CMOS optical receiver with integrated compound semiconductor thin-film inverted MSM detector
-
submitted to the
-
M. Lee, O. Vendier, M. Brooke, and N. M. Jokerst, "155 Mb/s quasi-monolithic, CMOS optical receiver with integrated compound semiconductor thin-film inverted MSM detector," submitted to the IEEE LEOS Annual Meeting, 1995.
-
(1995)
IEEE LEOS Annual Meeting
-
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Lee, M.1
Vendier, O.2
Brooke, M.3
Jokerst, N.M.4
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27
-
-
0028496963
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Integration of thin film optoelectronic devices onto micromachined movable platforms
-
Sept.
-
S. Wilkinson, Y. Kim, N. Jokerst, and M. Allen, "Integration of thin film optoelectronic devices onto micromachined movable platforms," IEEE Photon. Technol. Lett., vol. 6, no. 9, p. 1210-1212, Sept. 1994.
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IEEE Photon. Technol. Lett.
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Wilkinson, S.1
Kim, Y.2
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Allen, M.4
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28
-
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0024766093
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High-speed InP/GalnAs photodiode on sapphire substrate
-
H. Schumacher, T. J. Gmitter, H. P. LeBlanc, R. Bhat, E. Yablonovitch, and M. A. Koza, "High-speed InP/GalnAs photodiode on sapphire substrate," Electr. Lett., vol. 25, pp. 1653-1654, 1989.
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Koza, M.A.6
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29
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0024768506
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Grafted GaAs detectors on lithium niobate and glass optical waveguides
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A. Yi-Yan, W. K. Chan, T. J. Gmitter, L. T. Florenz, J. L. Jackel, E. Yablonovitch, R. Bhat, and J. P. Harbison, "Grafted GaAs detectors on lithium niobate and glass optical waveguides," IEEE Photon. Technol. Lett., vol. 1, pp. 379-380, 1989.
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IEEE Photon. Technol. Lett.
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Jackel, J.L.5
Yablonovitch, E.6
Bhat, R.7
Harbison, J.P.8
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30
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0025402266
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Optical coupling of GaAs photodetectors integrated with lithium niobate waveguides
-
W. K. Chan, A. Yi-Yan, T. J. Gmitter, L. T. Florenz, J. L. Jackel, D. M. Hwang, E. Yablonovitch, R. Bhat, and J. P. Harbison, "Optical coupling of GaAs photodetectors integrated with lithium niobate waveguides," IEEE Photon. Technol. Lett., vol. 2, pp. 194-196, 1990.
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IEEE Photon. Technol. Lett.
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Chan, W.K.1
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Jackel, J.L.5
Hwang, D.M.6
Yablonovitch, E.7
Bhat, R.8
Harbison, J.P.9
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31
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0026117492
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Grafted Semiconductor Optoelectronics
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A. Yi-Yan and W. K. Chan, "Grafted Semiconductor Optoelectronics," IEEE J. Quant. Electr. vol. 27, pp. 717-725, 1991.
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IEEE J. Quant. Electr.
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Yi-Yan, A.1
Chan, W.K.2
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32
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0028712770
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Demonstration of an optical interconnection plane for signal distribution and routing
-
November
-
E. Twyford, J. Chen, N. Hartman, and N. Jokerst, "Demonstration of an optical interconnection plane for signal distribution and routing," in Proc. IEEE Lasers Electro-Optics Society 1994 Annual Meeting, November 1994.
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(1994)
Proc. IEEE Lasers Electro-Optics Society 1994 Annual Meeting
-
-
Twyford, E.1
Chen, J.2
Hartman, N.3
Jokerst, N.4
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33
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34249866121
-
Monolithic Integration of a light emitting diode array and a silicon circuit using transfer process
-
May
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B. Dingle, M. Spitzer, R. McClelland, J. Fan, and P. Zavracky, "Monolithic Integration of a light emitting diode array and a silicon circuit using transfer process," Appl. Phys. Lett., vol. 62, no. 22, pp. 2760-2762, May 1993.
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Dingle, B.1
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34
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0026923827
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Vertical electrical interconnection of compound semiconductor thin-film devices to underlying silicon circuitry
-
C. Camperi-Ginestet, Y. W. Kim, N. M. Jokerst, M. G. Allen, and M. A. Brooke, "Vertical electrical interconnection of compound semiconductor thin-film devices to underlying silicon circuitry," IEEE Photon. Technol. Lett., vol. 4, pp. 1003-1006, 1992.
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IEEE Photon. Technol. Lett.
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Camperi-Ginestet, C.1
Kim, Y.W.2
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Allen, M.G.4
Brooke, M.A.5
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35
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0029393508
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8 × 8 array of thin film photodetectors vertically electrically interconnected onto silicon circuitry
-
submitted for publication
-
S. Fike, B. Buchanan, T. Morris, N.M. Jokerst, M.A. Brooke, and S. DeWeerth, "8 × 8 array of thin film photodetectors vertically electrically interconnected onto silicon circuitry," IEEE Photon. Technol. Lett., submitted for publication.
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IEEE Photon. Technol. Lett.
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Fike, S.1
Buchanan, B.2
Morris, T.3
Jokerst, N.M.4
Brooke, M.A.5
Deweerth, S.6
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36
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33748872579
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Bidirectional through-silicon communication using thin film InGaAsP emitters and detector bonded to silicon circuitry
-
Salt Lake City, March
-
C. Camperi-Ginestet, B. Buchanan, N. Jokerst, and M. Brooke, "Bidirectional through-silicon communication using thin film InGaAsP emitters and detector bonded to silicon circuitry," in Proc. OSA Optical Computing Conf., Salt Lake City, March, 1995.
-
(1995)
Proc. OSA Optical Computing Conf.
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-
Camperi-Ginestet, C.1
Buchanan, B.2
Jokerst, N.3
Brooke, M.4
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37
-
-
0029375970
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Communication through stacked silicon circuitry using integrated thin film InP-based emitters and detectors
-
submitted for publication
-
N. M. Jokerst, C. Camperi-Ginestet, B. Buchanan, S. Wilkinson, and M. A. Brooke, "Communication through stacked silicon circuitry using integrated thin film InP-based emitters and detectors," IEEE Photon. Technol. Lett., submitted for publication.
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IEEE Photon. Technol. Lett.
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Jokerst, N.M.1
Camperi-Ginestet, C.2
Buchanan, B.3
Wilkinson, S.4
Brooke, M.A.5
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38
-
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33748871592
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A fine-grain, high-throughput architecture using through-wafer optical communication
-
June
-
D. S. Wills, W. S. Lacy, C. Camperi-Ginestet, B. Buchanan, N. M. Jokerst, and M. A. Brooke, "A fine-grain, high-throughput architecture using through-wafer optical communication," IEEE J. Lightwave Tech., June 1995.
-
(1995)
IEEE J. Lightwave Tech.
-
-
Wills, D.S.1
Lacy, W.S.2
Camperi-Ginestet, C.3
Buchanan, B.4
Jokerst, N.M.5
Brooke, M.A.6
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