Higher κ metal-gate/high-κ/Ge n-MOSFETs with <1 nm EOT using laser annealing

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Chen, W B ^a   Shie, B S ^a   Chin, Albert ^a   Hsu, K C ^b   Chi, C C ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GATE CAPACITANCE; HIGH-FIELD; IDEALITY FACTORS; LASER ANNEALING; NMOSFETS; SUBTHRESHOLD;

ELECTRIC RESISTANCE; ELECTRON DEVICES; GERMANIUM; SHEET METAL;

MOSFET DEVICES;

EID: 79951838112     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703385     Document Type: Conference Paper

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