Interfacial layer dependence on device property of high-κ TiLaO Ge/Si N-type metal-oxide-semiconductor capacitors at small equivalent-oxide thickness

Applied Physics Letters

Volumn 95, Issue 21, 2009, Pages

  Chen, W B ^a   Chin, Albert ^a,b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Nano Electronics Consortium of Taiwan ^*  (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

C-V HYSTERESIS; CAPACITANCE DENSITY; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DEVICE PERFORMANCE; DEVICE PROPERTIES; EQUIVALENT OXIDE THICKNESS; INTERFACIAL LAYER; METAL OXIDE SEMICONDUCTOR; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; OUT-DIFFUSION; SECONDARY ION MASS SPECTROSCOPY; THERMAL ANNEALS; ULTRA-THIN;

CAPACITANCE; CAPACITORS; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; HYSTERESIS; MOS CAPACITORS; PHOTODEGRADATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 71549167991     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3265947     Document Type: Article

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